Datasheet > CT2306-R3

CT2306-R3

更新时间： 2022-02-26 14:48:13

品牌	Logo	应用领域
CTMICRO		/
页数	文件大小	规格书
10页	553K
描述
N-Channel Enhancement MOSFET

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CT2306-R3 数据手册

CT2306-R3

N-Channel Enhancement MOSFET

Features

Description

The CT2306-R3 uses high performance Trench

Technology to provide excellent R_DS(ON)and low gate

charge which is suitable for most of the synchronous

buck converter applications.

Drain-Source Breakdown Voltage V_DSS30 V

Drain-Source On-Resistance

•

R_DS(ON)25m

R_DS(ON)36m

Ω

, at V_GS= 10V, I_D=4.0A

, at V_GS= 4.5V, I_D= 3.5A

•

Continuous Drain Current at T_A=25 I_D= 4.7A

Advanced high cell density Trench Technology

RoHS Compliance & Halogen Free

Applications

•

Power Management

DC-DC Converter

Load Switch

Package Outline

Schematic

Drain

Gate

Source

Gate

Source

CT Micro

Proprietary & Confidential

Rev 2

Jun, 2015

Page 1

12 3 4 5 6 7...10

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