Datasheet > CT2301-R3

CT2301-R3

更新时间： 2022-02-26 14:49:43

品牌	Logo	应用领域
CTMICRO		/
页数	文件大小	规格书
11页	2030K
描述
P-Channel Enhancement MOSFET

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CT2301-R3 数据手册

CT2301-R3

P-Channel Enhancement MOSFET

Features

Description

The CT2301-R3 uses high performance Trench

Technology to provide excellent R_DS(ON)and low gate

charge which is suitable for most of the synchronous

buck converter applications .

• Drain-Source Breakdown Voltage V_DSS- 20 V

• Drain-Source On-Resistance

_DS(ON)85m

Ω

, at V_GS= - 4.5V, I_DS= - 3.0A

, at V_GS= - 2.5V, I_DS= - 2.0A

R_DS(ON)100m

Ω

• Continuous Drain Current at T_A=25 I_D= - 3.0A

• Advanced high cell density Trench Technology

• RoHS Compliance & Halogen Free

Applications

• Power Management

• Portable Equipment

• Battery Powered System

• Load Switch

Package Outline

Schematic

Drain

Gate

Source

Gate

CT Micro

Proprietary & Confidential

Rev 4

Aug, 2015

Page 1

12 3 4 5 6 7...11

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