Datasheet > CT2300-R3

CT2300-R3

更新时间： 2024-09-22 01:25:55

品牌	Logo	应用领域
CTMICRO		/
页数	文件大小	规格书
11页	2076K
描述
N-Channel Enhancement MOSFET

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CT2300-R3 数据手册

CT2300-R3

N-Channel Enhancement MOSFET

Features

Description

The CT2300-R3 uses high performance Trench

Technology to provide excellent R_DS(ON)and low gate

charge which is suitable for most of the synchronous

buck converter applications .

• Drain-Source Breakdown Voltage V_DSS20 V

• Drain-Source On-Resistance

_DS(ON)22m

Ω

, at V_GS= 4.5V, I_DS= 4.0A

, at V_GS= 2.5V, I_DS= 3.0A

R_DS(ON)27m

• Continuous Drain Current at T_A=25 I_D= 4.0A

• Advanced high cell density Trench Technology

• RoHS Compliance & Halogen Free

Applications

• Power Management

• Lithium Ion Battery

Package Outline

Schematic

Drain

Gate

Source

Gate

Source

CT Micro

Proprietary & Confidential

Rev 2

Jun, 2015

Page 1

12 3 4 5 6 7...11

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