Datasheet > CST10S40CT

CST10S40CT

更新时间： 2024-11-02 01:25:47

品牌	Logo	应用领域
竹懋 - CITC		/
页数	文件大小	规格书
3页	466K
描述
10A Trench Low Barrier Diode

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中文翻译

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CST10S40CT 数据手册

CST10S40CT

10A Trench Low Barrier Diode

■ Features

■ Outline

Dimensions in inches(millimeters)

TO-220AB

symbol

Min

Max

• Low forward voltage drop.

• Excellent high temperature stability.

• Fast switching capability.

• Lead-free parts meet environmental standards of

MIL-STD-19500 /228

ØP

0.398(10.1)

0.236(6.0)

0.579(14.7)

0.543(13.8)

0.143(3.63)

0.104(2.64)

0.335(8.5)

0.046(1.17)

0.028(0.71)

0.098(2.49)

0.176(4.47)

0.046(1.17)

0.102(2.6)

0.019(0.28)

0.147(3.74)

0.406(10.3)

0.252(6.4)

0.594(15.1)

0.551(14.0)

0.159(4.03)

0.112(2.84)

0.350(8.9)

0.054(1.37)

0.036(0.91)

0.102(2.59)

0.184(4.67)

0.054(1.37)

0.110(2.8)

0.021(0.48)

0.155(3.94)

Marking code

ØP

Alternate

■ Mechanical data

Dimensions in inches(millimeters)

symbol

Min

Max

0.413(10.5)

0.268(6.8)

• Epoxy : UL94-V0 rated flame retardant.

• Case : JEDEC TO-220AB molded plastic body.

• Terminals : Solder plated, solderable per

MIL-STD-750, Method 2026.

• Polarity: As marked.

• Mounting Position : Any.

ØP

0.394(10.0)

0.228(5.8)

0.570(14.48) 0.625(15.87)

0.519(13.18) 0.558(14.18)

0.089(3.5)

0.100(2.54)

0.330(8.38)

0.045(1.15)

0.029(0.75)

0.095(2.42)

0.160(4.07)

0.045(1.15)

0.080(2.04)

0.013(0.33)

0.148(3.75)

0.099(3.9)

0.120(3.04)

0.350(8.9)

0.060(1.52)

0.037(0.95)

0.105(2.66)

0.190(4.82)

0.055(1.39)

0.110(2.8)

Marking code

• Weight : Approximated 2.25 gram.

ØP

0.019(0.52)

0.156(3.95)

PIN 1

PIN 3

PIN 2

■ Maximum ratings and electrical characteristics

Rating at 25^OC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Parameter

Marking code

Conditions

Symbol

CST10S40CT

UNIT

Peak repetitive reverse voltage

Working peak reverse voltage

DC blocking voltage

V_RRM

V_RWM

V_RM

I_O

Forward rectified current (total device)

8.3ms single half sine-wave superimposed on

rate load (JEDEC method)

Forward surge current (per diode)

I_FSM

150

Peak repetitive reverse surge current

(per diode)

I_RRM

2us - 1kHz

^OC/W

^OC

R_θJC

Thermal resistance(1) (per diode)

Operating and Storage temperature

Junction to case

T_J, T_STG

-65 ~ +150

Parameter

Conditions

I_F= 5A, T_J= 25^OC

I_F= 5A, T_J= 125^OC

I_F= 10A, T_J= 25^OC

V_R= V_RRMT_J= 25^OC

V_R= V_RRMT_J= 125^OC

Symbol

V_F

MIN.

TYP.

350

MAX.

UNIT

440

380

520

0.5

Forward voltage drop (per diode)

I_R

Reverse current (per diode)

100

Note : 1.Thermal resistance from junction to case per leg, with heatsink size(1.35" x 0.95" x 0.18") Al-plate.

Document ID : DS-11K7K

Revised Date : 2015/05/26

Revision : C4

12 3

中文翻译

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