Datasheet > CSR2930800BA

CSR2930800BA

更新时间： 2024-11-20 21:55:27

品牌	Logo	应用领域
其他 - ETC		存储
页数	文件大小	规格书
50页	453K
描述
FLASH MEMORY CMOS 8M (1M x 8/512K x 16) BIT

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数据手册

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CSR2930800BA 数据手册

Rev. 1.1

FLASH MEMORY

CMOS

8M (1M × 8/512K × 16) BIT

CSR2930800BA^-90

■ DESCRIPTION

The CSR2930800BA are a 8M-bit, 3.0 V-only Flash memory organized as 1M bytes of 8 bits each or 512K words

of 16 bits each. TheCSR2930800BA are offered in a 48-pin TSOP(I), 44-pin SOP, and 48-ball FBGA packages.

These devices are designed to be programmed in-system with the standard system 3.0 V V^CCsupply. 12.0 V V^PP

and 5.0 V V^CCare not required for write or erase operations. The devices can also be reprogrammed in standard

EPROM programmers.

ThestandardCSR2930800BAofferaccesstimes90ns, allowingoperationofhigh-speedmicroprocessorswithout

wait states. To eliminate bus contention the devices have separate chip enable (CE), write enable (WE), and

output enable (OE) controls.

The CSR2930800BA are pin and command set compatible with JEDEC standard E²PROMs. Commands are

written to the command register using standard microprocessor write timings. Register contents serve as input

to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally latch

addresses and data needed for the programming and erase operations. Reading data out of the devices is similar

to reading from 5.0 V and 12.0 V Flash or EPROM devices.

The CSR2930800BA are programmed by executing the program command sequence. This will invoke the

Embedded Program Algorithm which is an internal algorithm that automatically times the program pulse widths

and verifies proper cell margin. Typically, each sector can be programmed and verified in about 0.5 seconds.

Erase is accomplished by executing the erase command sequence. This will invoke the Embedded Erase

Algorithm which is an internal algorithm that automatically preprograms the array if it is not already programmed

before executing the erase operation. During erase, the devices automatically time the erase pulse widths and

verify proper cell margin.

(Continued)

■ PRODUCT LINE UP

Part No.

CSR2930800BA

+0.6 V

–0.3 V

Ordering Part No.

V^CC= 3.0 V

-90

Max Address Access Time (ns)

Max CE Access Time (ns)

Max OE Access Time (ns)

(Continued)

12 3 4 5 6 7...50

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