Datasheet > CSLZ5V6

CSLZ5V6

更新时间： 2024-11-12 14:57:15

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
16页	1999K
描述
5.6 V Zener Diode, SOD-962 (SL2)

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中文翻译

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数据手册

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CSLZ5V6 数据手册

CSLZ Series

TOSHIBA Zener Diode Silicon Epitaxial Planar Type

CSLZ Series

Applications

Voltage surge protection

Features

• Small package

Packaging and Internal Circuit

1: Cathode

2: Anode

SL2

Absolute Maximum Ratings 1 (Note) (Unless otherwise specified, Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Power dissipation

150

400

°C

Junction temperature

Storage temperature

150

−55 to 150

°C

stg

Absolute Maximum Ratings 2 (Note) (Unless otherwise specified, Ta = 25°C)

Electrostatic discharge voltage

Type No.

Peak pulse

Type No.

Peak pulse

power

current

power

current

Contact

Air

Contact

Air

(kV)

(W)

(A)

(kV)

(W)

(A)

ESD

CSLZ5V6

CSLZ6V2

CSLZ6V8

CSLZ8V2

CSLZ10V

± 30

2.5

CSLZ12V

CSLZ16V

CSLZ20V

CSLZ24V

CSLZ30V

± 20

2.5

± 30

2.5

± 12

± 10

± 8

2.5

105

117

145

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change

in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings.Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept

and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

*1: Mounted on a glass epoxy circuit board of 20 mm × 20 mm, pad dimensions of 4 mm × 4 mm.

*2:

*3:

*4:

Mounted on a glass epoxy circuit board of 25.4 mm × 25.4 mm × 1.6 mmt, Cu pad: 645 mm

according to IEC61000-4-2

according to IEC61000-4-5, tp = 8 / 20 μs

Start of commercial production

2022-04

2022-05-24

Rev.1.0

Toshiba Electronic Devices & Storage Corporation

12 3 4 5 6 7...16

中文翻译

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