CSLZ Series
TOSHIBA Zener Diode Silicon Epitaxial Planar Type
CSLZ Series
Applications
Voltage surge protection
Features
• Small package
Packaging and Internal Circuit
1: Cathode
2: Anode
1
2
SL2
Absolute Maximum Ratings 1 (Note) (Unless otherwise specified, Ta = 25°C)
Characteristics
Symbol
Rating
Unit
*1
Power dissipation
P
P
150
400
mW
mW
°C
D
D
*2
Junction temperature
Storage temperature
T
150
j
T
−55 to 150
°C
stg
Absolute Maximum Ratings 2 (Note) (Unless otherwise specified, Ta = 25°C)
*3
*3
Electrostatic discharge voltage
Electrostatic discharge voltage
Type No.
Peak pulse
Peak pulse
Type No.
Peak pulse
Peak pulse
*4
*4
*4
*4
power
current
power
current
Contact
Air
Contact
Air
V
(kV)
P
(W)
I
(A)
V
(kV)
P
(W)
I
(A)
PP
ESD
PK
PP
ESD
PK
CSLZ5V6
CSLZ6V2
CSLZ6V8
CSLZ8V2
CSLZ10V
± 30
32
2.5
CSLZ12V
CSLZ16V
CSLZ20V
CSLZ24V
CSLZ30V
± 20
72
2.5
± 30
± 30
± 30
± 30
37
40
55
60
2.5
2.5
2.5
2.5
± 12
± 12
± 10
± 8
87
2.5
2.5
2.5
2.5
105
117
145
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change
in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept
and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
*1: Mounted on a glass epoxy circuit board of 20 mm × 20 mm, pad dimensions of 4 mm × 4 mm.
2
*2:
*3:
*4:
Mounted on a glass epoxy circuit board of 25.4 mm × 25.4 mm × 1.6 mmt, Cu pad: 645 mm
according to IEC61000-4-2
according to IEC61000-4-5, tp = 8 / 20 μs
Start of commercial production
2022-04
© 2022
2022-05-24
Rev.1.0
1
Toshiba Electronic Devices & Storage Corporation