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CSFMT106-G PDF预览

CSFMT106-G

更新时间: 2024-11-06 11:47:23
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上华 - COMCHIP /
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描述
Low Profile SMD Super Fast Recovery Rectifiers

CSFMT106-G 数据手册

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Low Profile SMD Super Fast Recovery Rectifiers  
SMD Diodes Specialist  
CSFMT101-HF Thru. CSFMT108-HF  
Reverse Voltage: 50 to 600 Volts  
Forward Current: 1.0 Amp  
RoHS Device  
Halogen Free  
SOD-123H  
Features  
0.146(3.7)  
0.130(3.3)  
0.012(0.3) Typ.  
-Excellent power dissipation offers better reverse  
leakage current and thermal resistance.  
-Low profile package is 40% thinner than standards  
SOD-123.  
-Tiny plastic SMD package.  
0.071(1.8)  
0.055(1.4)  
-High current capability.  
-Super fast reovery time for switching mode application.  
-High surge current capability.  
-Glass passivated chip junction.  
-Lead-free parts meet RoHS requirment.  
0.040(1.0)  
0.024(0.6)  
Mechanical data  
-Epoxy: UL94-V0 rated flame retardant.  
-Case: Molded plastic, SOD-123H/MINI SMA  
-Terminals: Solderable per MIL-STD-750, Method 2026.  
-Polarity: Indicated by cathode band.  
-Mounting Position: any  
0.031(0.8) Typ.  
0.031(0.8) Typ.  
Dimensions in inches and (millimeter)  
-Weight: 0.011 grams approx.  
Maximum Ratings (at TA=25°C unless otherwise noted)  
CSFMT CSFMT CSFMT CSFMT CSFMT CSFMT CSFMT CSFMT  
101-HF 102-HF 103-HF 104-HF 105-HF 106-HF 107-HF 108-HF  
Symbol  
VRRM  
VR  
Parameter  
Unit  
V
Max. repetitive peak reverse voltage  
Max. Continuous rever voltage  
50  
50  
35  
100  
100  
70  
150  
150  
105  
200  
200  
140  
300  
300  
400  
400  
280  
500  
500  
350  
600  
600  
420  
V
Max. RMS voltage  
VRMS  
IO  
210  
V
Max. averaged forward current  
1.0  
A
Max. Forward voltage  
@ IF=1.0A  
VF  
0.95  
1.25  
1.70  
V
Reverse recovery time (Note 1)  
ns  
TRR  
35  
25  
Max. Forward surge current  
8.3ms singe half sine-wave superimposed  
on rated load (JEDEC method)  
IFSM  
IR  
A
VR=VRRM TJ=25°C  
VR=VRRM TJ=100°C  
5.0  
μA  
Max. Reverse current  
100  
Typ. Thermal resistance  
Junction to ambient air  
RθJA  
42  
10  
°C/W  
pF  
Typ. Junction capacitance  
f=1MHz and applied 4V DC reverse voltage  
CJ  
Operating junction temperature  
TJ  
-55 to +150  
-65 to +175  
°C  
°C  
Storage temperature  
TSTG  
Note 1. Reverse recovery time test condition,IF=0.5A,IR=1.0A,IRR=0.25A  
REV: A  
Page 2  
QW-JS002  
Comchip Technology CO., LTD.  

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