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CSDD-25NBK PDF预览

CSDD-25NBK

更新时间: 2024-02-19 15:49:03
品牌 Logo 应用领域
CENTRAL 可控硅
页数 文件大小 规格书
2页 399K
描述
Silicon Controlled Rectifier, 25A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, PLASTIC, D2PAK-3

CSDD-25NBK 技术参数

是否Rohs认证:不符合生命周期:Active
Reach Compliance Code:not_compliant风险等级:5.8
Is Samacsys:NJESD-609代码:e0
峰值回流温度(摄氏度):NOT SPECIFIED端子面层:Tin/Lead (Sn/Pb)
处于峰值回流温度下的最长时间:NOT SPECIFIED触发设备类型:SCR
Base Number Matches:1

CSDD-25NBK 数据手册

 浏览型号CSDD-25NBK的Datasheet PDF文件第2页 
CSDD-25M  
CSDD-25N  
www.centralsemi.com  
SURFACE MOUNT  
SILICON CONTROLLED RECTIFIER  
25 AMP, 600 THRU 800 VOLTS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CSDD-25M series  
type is an Epoxy Molded Silicon Controlled Rectifier  
designed for sensing circuit applications and control  
systems.  
MARKING: FULL PART NUMBER  
D2PAK CASE  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
SYMBOL  
CSDD-25M CSDD-25N UNITS  
C
Peak Repetitive Off-State Voltage  
V
V
600  
800  
V
A
DRM, RRM  
I
RMS On-State Current (T =90°C)  
C
25  
260  
250  
310  
40  
T(RMS)  
Peak Non-Repetitive Surge Current, t=8.3ms  
Peak Non-Repetitive Surge Current, t=10ms  
I2t Value for Fusing, t=10ms  
I
A
TSM  
I
A
A2s  
TSM  
I2t  
Peak Gate Power, tp=10μs  
P
GM  
W
Average Gate Power Dissipation  
Peak Forward Gate Current, tp=10μs  
Peak Forward Gate Voltage, tp=10μs  
Peak Reverse Gate Voltage, tp=10μs  
Critical Rate of Rise of On-State Current  
Operating Junction Temperature  
Storage Temperature  
P
1.0  
4.0  
16  
W
G(AV)  
I
A
FGM  
V
V
FGM  
V
5.0  
100  
V
RGM  
di/dt  
A/μs  
°C  
°C  
°C/W  
°C/W  
T
-40 to +125  
-40 to +150  
60  
J
T
stg  
Thermal Resistance  
Θ
JA  
JC  
Thermal Resistance  
Θ
1.3  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
C
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
μA  
I
I
I
I
I
Rated V V  
DRM, RRM  
10  
4.0  
30  
DRM, RRM  
I
Rated V  
V T =125°C  
mA  
mA  
mA  
V
DRM, RRM  
DRM, RRM, C  
V =12V, R =10Ω  
4.2  
GT  
D
L
I =100mA  
12.5  
0.65  
50  
H
T
V
V
V =12V, R =10Ω  
1.50  
1.80  
GT  
D
L
I
=50A, tp=380μs  
2
V
TM  
TM  
dv/dt  
V = / V  
T =125°C  
200  
V/μs  
3
D
DRM, C  
R2 (17-February 2010)  

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