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CSD23381F4R

更新时间： 2024-11-28 12:56:15

品牌	Logo	应用领域
德州仪器 - TI		/
页数	文件大小	规格书
12页	786K
描述
CSD23381F4, 12 V P-Channel FemtoFET MOSFET

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中文翻译

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技术参数
数据手册

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CSD23381F4R 技术参数

是否无铅：	含铅	是否Rohs认证：	符合
生命周期：	Obsolete	Reach Compliance Code：	compliant
风险等级：	5.21	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

CSD23381F4R 数据手册

CSD23381F4

SLPS450B –OCTOBER 2013–REVISED FEBRUARY 2014

CSD23381F4, 12 V P-Channel FemtoFET™ MOSFET

1 Features

Product Summary

Drain-to-Source Voltage

•

Ultra-Low On Resistance

V_DS

Q_g

–12

1140

Ultra-Low Q_gand Q_gd

Gate Charge Total (–4.5 V)

Gate Charge Gate to Drain

mΩ

High Operating Drain Current

Ultra-Small Footprint (0402 Case Size)

Q_gd

190

V_GS= –1.8 V

V_GS= –2.5 V

V_GS= –4.5 V

–0.95

480

250

150

R_DS(on)Drain-to-Source On Resistance

–

1.0 mm × 0.6 mm

Ultra-Low Profile

0.35 mm Max Height

Integrated ESD Protection Diode

•

V_GS(th)

Threshold Voltage

–

Ordering Information

–

Rated > 4 kV HBM

Rated > 2 kV CDM

Device

Qty

Media

Package

Ship

CSD23381F4

3000

Femto(0402)

1.0 mm x 0.6 mm

Land Grid Array (LGA)

7-Inch

Reel

Tape and

Reel

•

Lead and Halogen Free

RoHS Compliant

CSD23381F4T

250

2 Applications

Absolute Maximum Ratings

•

Optimized for Load Switch Applications

T_A= 25°C

VALUE

UNIT

Optimized for General Purpose Switching

Applications

V_DS

V_GS

I_D

Drain-to-Source Voltage

–12

–8

Gate-to-Source Voltage

Continuous Drain Current⁽¹⁾

Pulsed Drain Current⁽²⁾

–2.3

–9

•

Battery Applications

I_DM

Handheld and Mobile Applications

Continuous Gate Clamp Current

Pulsed Gate Clamp Current⁽²⁾

Power Dissipation⁽¹⁾

–35

–350

500

I_G

3 Description

P_D

This 150 mΩ, 12 V P-Channel FemtoFET™ MOSFET

is designed and optimized to minimize the footprint in

many handheld and mobile applications. This

technology is capable of replacing standard small

signal MOSFETs while providing at least a 60%

reduction in footprint size.

Human Body Model (HBM)

Charged Device Model (CDM)

ESD

Rating

T_J,

T_STG

Operating Junction and

Storage Temperature Range

–55 to 150

°C

(1) Typical R_θJA= 85°C/W on 1-inch²(6.45-cm²), 2-oz. (0.071-

mm thick) Cu pad on a 0.06-inch (1.52-mm) thick FR4 PCB.

(2) Pulse duration ≤ 300 μs, duty cycle ≤ 2%

Typical Part Dimensions

Top View

0.35 mm

0.60 mm

1.00 mm

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. PRODUCTION DATA.

12 3 4 5 6 7...12

中文翻译

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与CSD23381F4R相关器件

型号	品牌	获取价格	描述	数据表
CSD23381F4T	TI	获取价格	采用 0.6mm x 1mm LGA 封装、具有栅极 ESD 保护的单路、175mΩ、-1
CSD23382F4	TI	获取价格	采用 0.6mm x 1mm LGA 封装、具有栅极 ESD 保护的单路、76mΩ、-12
CSD23382F4T	TI	获取价格	采用 0.6mm x 1mm LGA 封装、具有栅极 ESD 保护的单路、76mΩ、-12
CSD2410	CRYDOM	获取价格	Panel Mount
CSD2410_11	CRYDOM	获取价格	Panel Mount
CSD2410-10	CRYDOM	获取价格	Trigger Output SSR, 1-Channel, 4000V Isolation, PLASTIC PACKAGE-4
CSD2410F	CRYDOM	获取价格	Trigger Output SSR, 1-Channel, 4000V Isolation, ROHS COMPLIANT, PLASTIC PACKAGE-4
CSD2410F-10	CRYDOM	获取价格	Trigger Output SSR, 1-Channel, 4000V Isolation, PLASTIC PACKAGE-4
CSD2410FGH	CRYDOM	获取价格	Trigger Output SSR, 1-Channel, 4000V Isolation, ROHS COMPLIANT, PLASTIC PACKAGE-4
CSD2410FGH-10	CRYDOM	获取价格	Trigger Output SSR, 1-Channel, 4000V Isolation, ROHS COMPLIANT, PLASTIC PACKAGE-4

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