CSD18532NQ5B

更新时间： 2024-09-25 12:52:47

品牌	Logo	应用领域
德州仪器 - TI		/
页数	文件大小	规格书
12页	1334K
描述
60-V, N-Channel NexFETâ¢ Power MOSFETs

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替代型号

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CSD18532NQ5B 数据手册

CSD18532NQ5B

www.ti.com

SLPS440 –JUNE 2013

60-V, N-Channel NexFET™ Power MOSFETs

Check for Samples: CSD18532NQ5B

FEATURES

PRODUCT SUMMARY

•

Ultra Low Qg and Qgd

Low Thermal Resistance

Avalanche Rated

T_A= 25°C

V_DS

TYPICAL VALUE

UNIT

Drain to Source Voltage

Gate Charge Total (10V)

Gate Charge Gate to Drain

Q_g

mΩ

Q_gd

7.9

Pb Free Terminal Plating

RoHS Compliant

V_GS= 6V

3.5

2.7

R_DS(on)Drain to Source On Resistance

V_GS(th)Threshold Voltage

V_GS= 10V

Halogen Free

2.8

SON 5-mm × 6-mm Plastic Package

ORDERING INFORMATION

APPLICATIONS

Device

Package

Media

Qty

Ship

•

DC-DC Conversion

SON 5-mm × 6-mm

Plastic Package

13-Inch

Reel

Tape and

Reel

CSD18532NQ5B

2500

Secondary Side Synchronous Rectifier

Isolated Converter Primary Side Switch

Motor Control

ABSOLUTE MAXIMUM RATINGS

T_A= 25°C

VALUE

UNIT

V_DS

V_GS

Drain to Source Voltage

DESCRIPTION

Gate to Source Voltage

±20

The NexFET™ power MOSFET has been designed

to minimize losses in power conversion applications.

Continuous Drain Current (Package limited),

T_C= 25°C

100

163

I_D

Continuous Drain Current (Silicon limited),

T_C= 25°C

Top View

Continuous Drain Current, T_A= 25°C⁽¹⁾

Pulsed Drain Current, T_A= 25°C⁽²⁾

Power Dissipation⁽¹⁾

135

3.2

I_DM

P_D

T_J,

Operating Junction and Storage

T_STGTemperature Range

–55 to 150

360

°C

Avalanche Energy, single pulse

I_D= 85A, L = 0.1mH, R_G= 25Ω

E_AS

(1) Typical R_θJA= 40°C/W on a 1-inch², 2-oz. Cu pad on a 0.06-

inch thick FR4 PCB.

(2) Pulse duration ≤300μs, duty cycle ≤2%

P0093-01

R_DS(on)vs V_GS

GATE CHARGE

T_C= 25°C Id = 25A

T_C= 125ºC Id = 25A

I_D= 25A

V_DS= 30V

Q_g- Gate Charge (nC)

V_GS- Gate-to- Source Voltage (V)

G001

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

NexFET is a trademark of Texas Instruments.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.

12 3 4 5 6 7...12

中文翻译

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CSD18532NQ5B 替代型号

型号	品牌	替代类型	描述	数据表
CSD18532NQ5BT	TI	类似代替	N-Channel NexFET Power MOSFET
CSD18532Q5B	TI	类似代替	60-V, N-Channel NexFET Power MOSFETs
IRFH5006TRPBF	INFINEON	功能相似	HEXFET Power MOSFET

与CSD18532NQ5B相关器件

型号	品牌	获取价格	描述	数据表
CSD18532NQ5BT	TI	获取价格	N-Channel NexFET Power MOSFET
CSD18532Q5B	TI	获取价格	60-V, N-Channel NexFET Power MOSFETs
CSD18532Q5BT	TI	获取价格	采用 5mm x 6mm SON 封装的单路、3.2mΩ、60V、N 沟道 NexFET™
CSD18533KCS	TI	获取价格	60-V, N-Channel NexFET Power MOSFETs
CSD18533Q5A	TI	获取价格	60-V N-Channel NexFET Power MOSFETs
CSD18533Q5AT	TI	获取价格	采用 5mm x 6mm SON 封装的单路、5.9mΩ、60V、N 沟道 NexFET™
CSD18534KCS	TI	获取价格	60-V, N-Channel NexFET Power MOSFETs
CSD18534Q5A	TI	获取价格	60-V N-Channel NexFET Power MOSFETs
CSD18534Q5AT	TI	获取价格	采用 5mm x 6mm SON 封装的单路、9.8mΩ、60V、N 沟道 NexFET™
CSD18535KCS	TI	获取价格	CSD18535KCS 60 V N-Channel NexFET Power MOSFET

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