Datasheet > CSC4212

CSC4212

更新时间： 2024-09-22 23:44:03

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
3页	50K
描述
BJT

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中文翻译

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数据手册

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CSC4212 数据手册

IS/ISO 9002

Lic# QSC/L- 000019.3

Continental Device India Limited

An IS/ISO 9002 and IECQ Certified Manufacturer

NPN EPITAXIAL SILICON POWER TRANSISTOR

CSC4212

TO-126

Plastic Package

For Colour TV Horizontal Deflection Driver

ABSOLUTE MAXIMUM RATINGS (T_c=25ºC)

Value

350

300

7.5

400

200

1.2*

5.0**

150

DESCRIPTION

SYMBOL

V_CBO

UNIT

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Peak Collector Current

Collector Current

V_CEO

V_EBO

I_CP

I_C

P_C

Total Power Dissipation

T_j

Junction Temperature

Storage Temperature

ºC

T_stg

- 55 to +150

ºC

* Without heat sink

**With a 100x100x2mm A1 heat sink

ELECTRICAL CHARACTERISTICS (T_c=25ºC unless specified otherwise )

DESCRIPTION

SYMBOL

TEST CONDITION

MIN

TYP

MAX

2.0

UNIT

I_CBO

V_CB=200V, I_E=0

V_EB=5V, I_C=0

I_C=100mA, I_E=0

I_C=5mA, I_B=0

Collector Cut off Current

Emitter Cut off Current

Collector Base Voltage

Collector Emitter Voltage

I_EBO

V_CBO

V_CEO

2.0

350

300

V_EBO

h_FE

V_{CE (sat)}

I_E=100mA, I_C=0

I_C=10mA, V_CE=10V

I_C=50mA, I_B=5mA

Emitter Base Voltage

7.5

DC Current Gain

Collector Emitter Saturation Voltage

250

1.0

Dynamic Characteristics

Transition Frequency

f_T

I_C=10mA, V_CB=30V,

f=200MHz

I_E=0,V_CB=50V, f=0.1MHz

MHz

C_ob

Output Capacitance

4.5

Data Sheet

Page 1 of 3

Continental Device India Limited

12 3

中文翻译

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CSC460	CDIL	获取价格	NPN SILICON PLANAR EPITAXIAL TRANSISTORS
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