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CSB817OF PDF预览

CSB817OF

更新时间: 2024-09-21 21:14:35
品牌 Logo 应用领域
CDIL 局域网晶体管
页数 文件大小 规格书
4页 106K
描述
Power Bipolar Transistor, 12A I(C), 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin

CSB817OF 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Contact Manufacturer包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:compliant风险等级:5.74
外壳连接:ISOLATED最大集电极电流 (IC):12 A
配置:SINGLE最小直流电流增益 (hFE):20
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):90 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON标称过渡频率 (fT):15 MHz
Base Number Matches:1

CSB817OF 数据手册

 浏览型号CSB817OF的Datasheet PDF文件第2页浏览型号CSB817OF的Datasheet PDF文件第3页浏览型号CSB817OF的Datasheet PDF文件第4页 
IS/ISO 9002  
Lic# QSC/L- 000019.2  
Continental Device India Limited  
An IS/ISO 9002 and IECQ Certified Manufacturer  
PNP POWER TRANSISTOR  
CSB 817F  
TO 3P  
Plastic Package  
B
C
E
Complementary CSD1047F  
Audio Power Amplifier and DC to DC Converter  
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise )  
DESCRIPTION  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
MIN  
160  
140  
6.0  
TYP  
MAX  
UNIT  
V
V
V
A
Collector -Base Voltage(open emitter)  
Collector -Emitter Voltage(open base)  
Emitter Base Voltage(open collector)  
Collector Current(DC)  
12  
15  
90  
IC  
Ptot  
Collector Current (Pulse )  
A
Total Power Dissipation upto Tc=25º C  
Junction Temperature  
W
ºC  
ºC  
Tj  
150  
Tstg  
-55 to +150  
Storage Temperature  
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)  
DESCRIPTION  
SYMBOL TEST CONDITION  
MIN  
TYP  
MAX  
0.1  
0.1  
UNIT  
mA  
mA  
V
V
V
ICBO  
IEBO  
VCB=80V, IE=0  
VEB=4V, IC=0  
IC=10mA, IB=0  
IC=5mA, IE=0  
IE=5mA, IC=0  
Collector Cut off Current  
Emitter Cut off Current  
Breakdown Voltages  
VCEO  
VCBO  
VEBO  
140  
160  
6.0  
Saturation Voltage  
VCE(sat) IC=5A, IB=0.5A  
2.5  
1.5  
200  
V
V
VBE(on)  
IC=1A, VCE =5V  
IC=1A,VCE=5V**  
IC=6A,VCE=5V  
Base Emitter on Voltage  
DC Current Gain  
hFE  
*
60  
20  
Co  
fT  
VCB=10V, IE=0  
IC=1A,VCE=5V  
Output Capacitance at f =1MHz  
Transition Frequency  
300  
15  
pF  
MHz  
Continental Device India Limited  
Data Sheet  
Page 1 of 4  

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