CSB772EBULK

更新时间： 2024-09-21 13:07:07

品牌	Logo	应用领域
CDIL		/
页数	文件大小	规格书
3页	137K
描述
Small Signal Bipolar Transistor,

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中文翻译

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技术参数
数据手册

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CSB772EBULK 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	compliant
风险等级：	5.69	Is Samacsys：	N
Base Number Matches：	1

CSB772EBULK 数据手册

Continental Device India Limited

An ISO/TS16949 and ISO 9001 Certified Company

PNP PLASTIC POWER TRANSISTOR

CSB772

TO126

Plastic Package

Complementary CSD882

Audio Frequency Power Amplifier and Low Speed Switching

ABSOLUTE MAXIMUM RATINGS(Ta=25ºC unless specified otherwise)

DESCRIPTION

Collector Base Voltage(open emitter)

Collector Emitter Voltage (open base)

SYMBOL

V_CBO

VALUE

>40

>30

UNIT

V_CEO

V_EBO

I_C

I_B

P_tot

Emitter Base Voltage(open collector)

Collector Current (DC)

Collector Current (Pulse) (1)

Base Current (DC)

Total Power Dissipation@ Tc=25ºC

Total Power Dissipation@ Ta=25ºC

>5.0

<3.0

<0.6

<10

<1.0

ºC

T_j

Junction Temperature

Storage Temperature

<150

T_stg

-65 to +150

ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL TEST CONDITION

MIN

TYP

MAX

UNIT

µA

I_CBO

I_E=0, V_CB=30V

Collector-Cut off Current

1.0

µA

I_EBO

V_EB=3V, I_C=0

Emitter cut off Current

Breakdown Voltages

1.0

V_CEO

V_CBO

I_C=1mA, I_B=0

I_C=1mA, I_E=0

I_C=0, I_E=1mA

I_C=2A, I_B=0.2A

V_EBO

_CE(sat)*

V_BE(sat)*

Saturation Voltages

DC Current Gain

0.5

2.0

IC=2A, IB=0.2A

h_FE*

I_C=20mA,V_CE=2V

I_C=1.0A,V_CE=2V**

400

C_O

f_T

I_E=0, V_CB=10V

I_C=0.1A, V_CE=5V

Output Capacitance at f=1MHz

Transition Frequency

MHz

* Pulse test : pulse width < 350µs, Duty cycle < 2%

(1) PW = 10ms, Duty Cycle < 50%

**h_FEclassification : R :60-120 Q :100-200 P: 160-320 E: 200-400

Continental Device India Limited

Data Sheet

Page 1 of 3

12 3

中文翻译

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