Datasheet > CSB764PNP

CSB764PNP

更新时间： 2024-09-22 01:22:23

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描述
EPITAXIAL PLANAR SILICON TRANSISTORS

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数据手册

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CSB764PNP 数据手册

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

EPITAXIAL PLANAR SILICON TRANSISTORS

CSB764 PNP

CSD863 NPN

TO-92L

Plastic Package

Voltage Regulator, Relay Lamp Driver Electrical Equipment Applications

ABSOLUTE MAXIMUM RATINGS (T_a=25ºC )

VALUE

DESCRIPTION

SYMBOL

UNITS

V_CBO

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

V_CEO

V_EBO

I_C

5.0

1.0

I_CP

P_C

T_j

2.0

0.9

150

Peak Collector Current

Collector Power Dissipation

Junction Temperature

ºC

T_stg

- 55 to +150

Storage Temperature

ºC

ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

V_CBO

TEST CONDITION

MIN

TYP

MAX

UNITS

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Cut Off Current

Emitter Cut Off Current

DC Current Gain

I_C=10mA, I_E=0

I_C=1mA, I_B=0

I_E=10mA, I_C=0

V_CB=50V, I_E=0

V_EB=4V, I_C=0

V_CEO

V_EBO

5.0

I_CBO

1.0

320

I_EBO

*h_FE

h_FE

I_C=50mA, V_CE=2V

I_C=1A, V_CE=2V

V_{CE (sat)}

I_C=500mA, I_B=50mA

Collector Emitter Saturation Voltage

NPN

PNP

0.5

0.7

V_{BE (sat)}

I_C=500mA, I_B=50mA

Base Emitter Saturation Voltage

1.2

DYNAMIC CHARACTERISTICS

Transition Frequency

f_T

V_CE=10V, I_C=50mA

TYP150

MHz

C_ob

V_CB=10V,I_E=0, f=1MHz

Output Capacitance

TYP12

TYP20

NPN

PNP

CLASSIFICATION

*h_FE

160 - 320

60 - 120

100 - 200

CSB764_CSD863Rev020206E

Data Sheet

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Continental Device India Limited

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