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CSB631KD PDF预览

CSB631KD

更新时间: 2024-11-07 23:43:59
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
3页 29K
描述
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 1A I(C) | TO-126

CSB631KD 数据手册

 浏览型号CSB631KD的Datasheet PDF文件第2页浏览型号CSB631KD的Datasheet PDF文件第3页 
IS/ISO 9002  
Lic# QSC/L- 000019.2  
IS / IECQC 700000  
IS / IECQC 750100  
Continental Device India Limited  
An IS/ISO 9002 and IECQ Certified Manufacturer  
CSB631, CSB631K  
TO-126 (SOT-32) Plastic Package  
CSD600, CSD600K  
CSB631, 631K  
CSD600, 600K  
PNP PLASTIC POWER TRANSISTORS  
NPN PLASTIC POWER TRANSISTORS  
Low frequency Power Amplifier and Medium Speed Switching Applications  
PIN
1. E
2. C
3. B
1
3
ALL DIMENSIONS IN MM  
ABSOLUTE MAXIMUM RATINGS  
631  
600  
max. 100  
max. 100  
max.  
631K  
600K  
120 V  
120 V  
A
Collector-base voltage (open emitter)  
Collector-emitter voltage (open base)  
Collector current  
V
V
CBO  
CEO  
I
1.0  
8.0  
C
Total power dissipation up to T = 25°C  
P
max.  
W
C
C
Junction temperature  
T
j
max.  
150  
°C  
Collector-emitter saturation voltage  
I
C
= 0.5 A; I = 50 mA  
V
CEsat  
max.  
0.4  
V
B
D.C. current gain  
I
C
= 50 mA; V  
= 5 V  
h
FE  
min.  
60  
CE  
max.  
320  
RATINGS (at T =25°C unless otherwise specified)  
A
Limiting values  
Collector-base voltage (open emitter)  
Collector-emitter voltage (open base)  
V
V
max. 100  
max. 100  
120 V  
120 V  
CBO  
CEO  
Continental Device India Limited  
Data Sheet  
Page 1 of 3  

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Pin Diode, 80V V(BR), Silicon