Datasheet > CSB612

CSB612

更新时间： 2024-09-20 23:43:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
3页	91K
描述
TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 120V V(BR)CEO \| 6A I(C) \| TO-220AB

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

CSB612 数据手册

IS/ISO 9002

Lic# QSC/L- 000019.2

IS / IECQC 700000

IS / IECQC 750100

Continental Device India Limited

An IS/ISO 9002 and IECQ Certified Manufacturer

PNP SILICON PLASTIC POWER DARLINGTON TRANSISTOR

CSB612

(9AW)

TO-220

MARKING : CSB

612

Designed for Relay Drive and Motor Drive

ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)

DESCRIPTION

SYMBOL

VCBO

VCEO

VEBO

VALUE

120

5.0

6.0

UNIT

Collector -Base Voltage

Collector -Emitter Voltage

Emitter Base Voltage

Collector Current

t=100ms

ICP

9.0

Base Current

1.0

Collector Power Dissipation @ Ta=25 deg C

Collector Power Dissipation @ Tc=25 deg C

Junction Temperature

Storage Temperature Range

2.0

150

-55 to +150

deg C

Tstg

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified)

DESCRIPTION

SYMBOL TEST CONDITION

MIN

120

5.0

TYP MAX

UNIT

Collector Emitter Voltage

Emitter Base Voltage

Collector Cut off Current

Emitter Cut off Current

Collector Emitter Saturation Voltage

DC Current Gain

VCEO

VEBO

ICBO

IEBO

IC=5mA, IB=0

IE=5mA, IC=0

VCB=120V, IE=0

VEB=5V,IC=0

100

3.0

2.5

VCE(Sat) IC=5A,IB=5mA

hFE

IC=2A, VCE=3V

IC=6A, VCE=3V

2.0

1.0

Dynamic Characteristics

Transition Frequency

Collector Output Capacitance

Cob

VCE=12V,IC=0.5A,

VCB=10V, IE=0

f=1MHz

100

110

MHz

Continental Device India Limited

Page 1 of 3

Data Sheet

12 3

中文翻译

下载PDF

与CSB612相关器件

型号	品牌	获取价格	描述	数据表
CSB621	CDIL	获取价格	PNP SILICON PLANAR EPITAXIAL TRANSISTORS
CSB621A	CDIL	获取价格	PNP SILICON PLANAR EPITAXIAL TRANSISTORS
CSB621AQ	CDIL	获取价格	Transistor
CSB621AR	ETC	获取价格	BJT
CSB621AS	ETC	获取价格	BJT
CSB621Q	CDIL	获取价格	Transistor
CSB621R	CDIL	获取价格	Transistor
CSB621S	CDIL	获取价格	Transistor
CSB631	CDIL	获取价格	PNP PLASTIC POWER TRANSISTORS
CSB631D	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 100V V(BR)CEO \| 1A I(C) \| TO-126