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CS92BTRA PDF预览

CS92BTRA

更新时间: 2024-02-25 14:32:17
品牌 Logo 应用领域
CENTRAL 栅极触发装置可控硅整流器
页数 文件大小 规格书
2页 72K
描述
Silicon Controlled Rectifier, 0.8A I(T)RMS, 200V V(RRM), 1 Element, TO-92

CS92BTRA 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:CYLINDRICAL, O-PBCY-T3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.30.00.80风险等级:5.64
配置:SINGLE最大直流栅极触发电流:0.02 mA
最大直流栅极触发电压:0.8 V最大维持电流:5 mA
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e0元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大均方根通态电流:0.8 A重复峰值反向电压:800 V
表面贴装:NO端子面层:TIN LEAD
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED触发设备类型:SCR
Base Number Matches:1

CS92BTRA 数据手册

 浏览型号CS92BTRA的Datasheet PDF文件第2页 
TM  
CS92B  
CS92D  
CS92M  
CS92N  
Central  
Semiconductor Corp.  
SILICON CONTROLLED RECTIFIER  
0.8 AMP, 200 THRU 800 VOLTS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CS92B  
series type is an epoxy molded Silicon Controlled  
Rectifier designed for sensing circuit applications  
and control systems.  
MARKING CODE: FULL PART NUMBER  
TO-92 CASE  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
C
SYMBOL  
CS92B CS92D CS92M CS92N  
UNITS  
V
A
A
A2s  
W
W
A
V
°C  
°C  
°C/W  
°C/W  
Peak Repetitive Off-State Voltage  
V
V
200  
400  
600  
800  
DRM, RRM  
RMS On-State Current (T =90°C)  
I
I
0.8  
10  
C
T(RMS)  
TSM  
Peak One Cycle Surge (t=10ms)  
I2t Value for Fusing (t=10ms)  
Peak Gate Power (tp=10µs)  
Average Gate Power Dissipation  
Peak Gate Current (tp=10µs)  
Peak Gate Voltage (tp=10µs)  
Storage Temperature  
I2t  
0.24  
2.0  
0.1  
1.0  
8.0  
P
P
I
GM  
G (AV)  
GM  
V
T
T
Θ
Θ
GM  
stg  
J
-40 to +150  
-40 to +125  
200  
Junction Temperature  
Thermal Resistance  
Thermal Resistance  
JA  
JC  
100  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
C
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
1.0  
100  
200  
5.0  
UNITS  
µA  
µA  
µA  
mA  
V
I
I
I
I
V
V
I
I
Rated V  
Rated V  
V
V
R
=1KΩ  
=1KΩ, T =125°C  
DRM, RRM  
DRM, RRM, GK  
R
DRM, RRM  
DRM, RRM, GK  
C
V =12V  
GT  
H
GT  
TM  
D
I =100mA, R =1KΩ  
T
D
TM  
GK  
V =12V  
I
0.8  
1.7  
=1.0A, tp=380µs  
2
V
V/µs  
dv/dt  
V = / V  
R
=1KΩ, T =125°C  
25  
3
D
DRM, GK  
C
R3 (22-April 2004)  

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