Datasheet > CS8N05AEP-G

CS8N05AEP-G

更新时间： 2024-03-03 10:10:31

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	507K
描述
SOP-8

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

CS8N05AEP-G 数据手册

Silicon N-Channel Trench MOSFET

CS8N05 AEP-G

○

General Description：

V_DSS

I_D

CS8N05 AEP-G,the silicon N-channel Enhanced VDMOSFETs, is

obtained by advanced trench Technology which reduce the

P_D(T_C=25℃)

R_DS(ON)Typ(V_GS=10V)

3.1

mΩ

conduction

loss,

improve

switching

performance

and

enhance the avalanche energy. The transistor can be used in various

power switching circuit for system miniaturization and higher

efficiency. The package form is SOP-8, which accords with the

RoHS standard.

Features：

l Fast Switching

l Low ON Resistance (Rdson≤25mΩ)

l Low Reverse transfer capacitances(Typical:71pF)

l 100% Single Pulse avalanche energy Test

l Halogen free

Applications：

Power switch circuit of adaptor and charger.

Absolute（T_A= 25℃ unless otherwise specified）：

Parameter

Symbol

V_DSS

Rating

Units

Drain-to-Source Voltage

Continuous Drain Current

I_D

Continuous Drain Current T_A= 100 °C

Pulsed Drain Current

4.8

I_DM

V_GS

Gate-to-Source Voltage

±20

E_AS

Single Pulse Avalanche Energy

Power Dissipation

3.1

P_D

Derating Factor above 25°C

Operating Junction and Storage Temperature Range

0.025

–55 to 150

W/°C

°C

T_J，T_stg

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.

Page 1 of 10

2019V01

12 3 4 5 6 7...10

下载PDF

与CS8N05AEP-G相关器件

型号	品牌	描述	获取价格	数据表
CS8N25A3R	CRMICRO	TO-251	获取价格
CS8N25A4R	CRMICRO	TO-252(或DPAK)	获取价格
CS8N25A8R	CRMICRO	TO-220	获取价格
CS8N25FA9R	CRMICRO	TO-220F	获取价格
CS8N50A3R	CRMICRO	TO-251	获取价格
CS8N50A4R	CRMICRO	TO-252	获取价格