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CS89N PDF预览

CS89N

更新时间: 2024-11-09 04:12:47
品牌 Logo 应用领域
CENTRAL /
页数 文件大小 规格书
2页 74K
描述
0.8 AMP SCR 600 THRU 800 VOLTS

CS89N 数据手册

 浏览型号CS89N的Datasheet PDF文件第2页 
TM  
Central  
CS89M  
CS89N  
Semiconductor Corp.  
0.8 AMP SCR  
600 THRU 800 VOLTS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CS89M  
series type is an Epoxy Molded Silicon Controlled  
Rectifier designed for sensing circuit applications  
and control systems.  
MARKING CODE: FULL PART NUMBER  
SOT-89 CASE  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
C
SYMBOL  
CS89M  
600  
CS89N  
800  
UNITS  
V
A
A
A2s  
W
W
A
V
Peak Repetitive Off-State Voltage  
V
V
DRM, RRM  
RMS On-State Current (T =60°C)  
I
I
0.8  
10  
C
T(RMS)  
TSM  
Peak One Cycle Surge (t=10ms)  
I2t Value for Fusing (t=10ms)  
Peak Gate Power (tp=10µs)  
Average Gate Power Dissipation  
Peak Gate Current (tp=10µs)  
Peak Gate Voltage (tp=10µs)  
Storage Temperature  
I2t  
0.24  
2.0  
0.1  
1.0  
8.0  
P
P
GM  
G(AV)  
GM  
I
V
GM  
stg  
J
T
T
Θ
-40 to +150  
-40 to +125  
104  
°C  
°C  
°C/W  
Junction Temperature  
Thermal Resistance  
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
C
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
1.0  
100  
200  
5.0  
UNITS  
µA  
µA  
µA  
mA  
V
I
I
I
I
V
V
I
I
Rated V  
Rated V  
V
R
=1KΩ  
DRM, RRM  
DRM, RRM, GK  
, V =1KΩ, T =125°C  
R
DRM, RRM  
DRM RRM, GK  
C
V =12V  
20  
GT  
H
GT  
TM  
D
R
=1KΩ  
GK  
0.25  
0.61  
1.2  
V =12V  
0.8  
1.7  
D
TM  
I
=1.0A, tp=380µs  
V
V/µs  
2
dv/dt  
V = / V  
R
=1KΩ, T =125°C  
25  
3
D
DRM, GK  
C
R0 (10-May 2004)  

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