Datasheet > CS840A8H

CS840A8H

更新时间： 2024-09-16 15:19:15

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	225K
描述
TO-220

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CS840A8H 数据手册

Silicon N-Channel Power MOSFET

○

CS840 A8H

General Description：

V _DSS

500

CS840 A8H, the silicon N-channel Enhanced VDMOSFETs,

is obtained by the self-aligned planar Technology which reduce

the conduction loss, improve switching performance and

enhance the avalanche energy. The transistor can be used in

various power switching circuit for system miniaturization and

higher efficiency. The package form is TO-220AB, which accords

with the RoHS standard.

I_D

P_D(T_C=25℃)

R_DS(ON)Typ

110

0.57

Ω

Features：

l Fast Switching

l Low ON Resistance(Rdson≤0.75Ω)

l Low Gate Charge (Typical Data:28nC)

l Low Reverse transfer capacitances(Typical:18pF)

l 100% Single Pulse avalanche energy Test

Applications：

Power switch circuit of adaptor and charger.

Absolute（Tc= 25℃ unless otherwise specified）：

Parameter

Symbol

V_DSS

Rating

Units

Drain-to-Source Voltage

500

Continuous Drain Current

I_D

Continuous Drain Current T_C= 100 °C

Pulsed Drain Current

6.2

I_DM

Gate-to-Source Voltage

V_GS

±30

Single Pulse Avalanche Energy

Avalanche Energy ,Repetitive

Avalanche Current

620

E_AS

E_AR

3.5

I_AR

Peak Diode Recovery dv/dt

Power Dissipation

V/ns

dv/dt

110

0.88

P_D

Derating Factor above 25°C

Operating Junction and Storage Temperature Range

MaximumTemperature for Soldering

W/℃

℃

T_J，T_stg

150，–55 to 150

300

T_L

℃

Electrical Characteristics（Tc= 25℃ unless otherwise specified）：

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.

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