Datasheet > CS80N07A0

CS80N07A0

更新时间： 2024-10-03 15:19:23

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	304K
描述
TO-263(或D2PAK)

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中文翻译

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数据手册

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CS80N07A0 数据手册

Silicon N-Channel Power MOSFET

CS80N07 A0

○

General Description：

V_DSS

I_D_（

CS80N07 A0, the silicon N-channel Enhanced

VDMOSFETs, is obtained by advanced Trench Technology

which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. The transistor

can be used in various power switching circuit for system

Silicon limited current^）

P_D(T_C=25℃)

156

6.5

R_DS(ON)Typ

mΩ

miniaturization and higher efficiency. The package form is TO-263,

which accords with the RoHS standard.

Features：

l Fast Switching

l Low ON Resistance(Rdson≤7.9mΩ)

l Low Gate Charge (Typical Data:51nC)

l Low Reverse transfer capacitances(Typical:174pF)

l 100% Single Pulse avalanche energy Test

Applications：

Power switch circuit of adaptor and charger.

Absolute（T_J= 25℃ unless otherwise specified）：

Parameter

Symbol

V_DSS

Rating

Units

Drain-to-Source Voltage

Continuous Drain Current T_C=25 °C

Continuous Drain Current T_C= 100 °C

Pulsed Drain Current T_C=25 °C

Gate-to-Source Voltage

I_D

320

I_DM

V_GS

±20

Single Pulse Avalanche Energy

Power Dissipation T_C=25 °C

325

E_AS

156

1.25

P_D

Derating Factor above 25°C

W/℃

℃

Operating Junction and Storage Temperature Range

Maximum Temperature for Soldering

T_J，T_stg

150，–55 to 150

300

T_L

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10

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