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CS7N10AQ2-1 PDF预览

CS7N10AQ2-1

更新时间: 2024-09-26 15:19:39
品牌 Logo 应用领域
华润微 - CRMICRO /
页数 文件大小 规格书
9页 478K
描述
DFN3×3

CS7N10AQ2-1 数据手册

 浏览型号CS7N10AQ2-1的Datasheet PDF文件第2页浏览型号CS7N10AQ2-1的Datasheet PDF文件第3页浏览型号CS7N10AQ2-1的Datasheet PDF文件第4页浏览型号CS7N10AQ2-1的Datasheet PDF文件第5页浏览型号CS7N10AQ2-1的Datasheet PDF文件第6页浏览型号CS7N10AQ2-1的Datasheet PDF文件第7页 
Silicon N-Channel Power MOSFET  
CS7N10 AQ2-1  
R
General Description  
VDSS  
100  
7
V
A
CS7N10 AQ2-1, the silicon N-channel Enhanced  
VDMOSFETs, is obtained by the high density Trench  
technology which reduce the conduction loss, improve switching  
performance and enhance the avalanche energy. This device is  
suitable for use as a load switch and PWM applications.. The  
package form is DFN3×3-8L, which accords with the RoHS  
standard..  
ID  
PD  
16.8  
113  
W
RDS(ON)Typ  
mΩ  
Features  
l Fast Switching  
Top View  
l Low ON Resistance(Rdson150 m)  
l Low Gate Charge  
l Low Reverse transfer capacitances  
l 100% Single Pulse avalanche energy Test  
Applications:  
Power switch circuit of adaptor and charger.  
AbsoluteTC= 25unless otherwise specified)  
Parameter  
Symbol  
VDSS  
Rating  
Units  
Drain-to-Source Voltage  
100  
7.0  
V
A
Continuous Drain Current  
Continuous Drain Current TC = 100 °C  
Pulsed Drain Current  
ID  
5.6  
A
a1  
28.0  
±20  
28.8  
7.6  
A
IDM  
Gate-to-Source Voltage  
VGS  
V
a2  
Avalanche Energy  
mJ  
A
EAS  
a2  
Avalanche Current  
IAS  
Power Dissipation  
16.8  
0.13  
W
PD  
Derating Factor above 25°C  
Operating Junction and Storage Temperature Range  
W/  
TJTstg  
15055 to 150  
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 9  
2019V01  

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