Datasheet > CS60N12A8

CS60N12A8

更新时间： 2024-11-02 15:19:27

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	421K
描述
TO-220

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CS60N12A8 数据手册

Silicon N-Channel Power MOSFET

CS60N12 A8

○

General Description：

V_DSS

120

CS60N12 A8, the silicon N-channel Enhanced

VDMOSFETs, is obtained by advanced Trench Technology

which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. The transistor

can be used in various power switching circuit for system

I_D

P_D(T_C=25℃)

198

R_DS(ON)Typ

mΩ

miniaturization and higher efficiency. The package form is

TO-220AB, which accords with the RoHS standard.

Features：

l Fast Switching

l Low ON Resistance(Rdson≤20mΩ)

l Low Gate Charge

l Low Reverse transfer capacitances(Typical:112.9pF)

l 100% Single Pulse avalanche energy Test

Applications：

Power switch circuit of adaptor and charger.

Absolute（T_J= 25℃ unless otherwise specified）：

Parameter

Symbol

V_DSS

Rating

Units

Drain-to-Source Voltage

120

Continuous Drain Current T_C= 25 °C

Continuous Drain Current T_C= 100 °C

Pulsed Drain Current T_C= 25 °C

Gate-to-Source Voltage

I_D

240

I_DM

V_GS

±20

Single Pulse Avalanche Energy

Power Dissipation T_C= 25 °C

397.8

E_AS

198

P_D

Derating Factor above 25°C

1.584

W/℃

℃

Operating Junction and Storage Temperature Range

Maximum Temperature for Soldering

T_J，T_stg

150，–55 to 150

300

T_L

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