Datasheet > CS3N06AS-G

CS3N06AS-G

更新时间： 2024-09-28 15:19:23

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	446K
描述
SOT-23

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CS3N06AS-G 数据手册

Silicon N-Channel Power MOSFET

CS3N06 AS-G

○

General Description：

V_DSS

CS3N06 AS-G, the silicon N-channel Enhanced

VDMOSFETs, is obtained by the high density Trench

technology which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. This device is

suitable for use as a battery protect or in other applications. The

package form is SOT-23, which accords with the RoHS standard.

Features：

I_D

R_DS(ON)Typ

mΩ

l Fast Switching

l Low ON Resistance(Rdson≤ 105mΩ)

l Low Gate Charge

l Low Reverse transfer capacitances

l 100% Single Pulse avalanche energy Test

l Halogen Free

Applications：

LED、electric tools

Absolute（TA= 25℃ unless otherwise specified）

Parameter

Symbol

V_DSS

Rating

Units

Drain-to-Source Voltage

Continuous Drain Current

I_D

Continuous Drain Current T_A= 100 °C

Pulsed Drain Current

1.8

I_DM

Gate-to-Source Voltage

V_GS

±20

Single Pulse Avalanche Energy

Power Dissipation

1.1

℃

E_AS

P_D

Operating Junction and Storage Temperature Range

T_J，T_stg

150，–55 to 150

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10

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