Datasheet > CS3N06AE-G

CS3N06AE-G

更新时间： 2024-03-03 10:10:53

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	510K
描述
SOP-8

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CS3N06AE-G 数据手册

Silicon N-Channel Power MOSFET

CS3N06 AE-G

○

General Description：

CS3N06 AE-G, the silicon N-channel Enhanced

V_DSS

VDMOSFETs, is obtained by the high density Trench technology

which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. The transistor

can be used in various power switching circuit for system

miniaturization and higher efficiency. The package form is SOP8,

which accords with the Halogen Free standard.

I_D

P_D(T_a=25℃)

R_DS(ON)

mΩ

Features：

l Fast Switching

l Low ON Resistance (Rdson≤100mΩ)

l Low Gate Charge

l Low Reverse transfer capacitances

l 100% Single Pulse avalanche energy Test

l Halogen Free

Applications：

Power switch circuit of adaptor and charger.

Absolute（TA= 25℃ unless otherwise specified）：

Parameter

Symbol

V_DSS

Rating

Units

Drain-to-Source Voltage

Continuous Drain Current

I_D

Continuous Drain Current T_A= 100 °C

Pulsed Drain Current

2.2

I_DM

Gate-to-Source Voltage

V_GS

±20

Single Pulse Avalanche Energy

Power Dissipation

11.2

E_AS

P_D

Derating Factor above 25°C

Operating Junction and Storage Temperature Range

0.016

W/℃

℃

T_J，T_stg

150，–55 to 150

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10

2020V01

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