CS30L60CT-A
Super Low Barrier High Voltage Power Rectifier
Chip Integration Technology Corporation
Main Product Characteristics
■ Outline
IF(AV)
VRRM
TJ
2x15A
Dimensions in inches(millimeters)
TO-220AB
K
symbol
Min
Max
L
ØP
60V
A
A
B
0.398(10.1)
0.236(6.0)
0.579(14.7)
0.543(13.8)
0.143(3.63)
0.104(2.64)
0.335(8.5)
0.046(1.17)
0.028(0.71)
0.098(2.49)
0.176(4.47)
0.046(1.17)
0.102(2.6)
0.019(0.28)
0.147(3.74)
0.406(10.3)
0.252(6.4)
0.594(15.1)
0.551(14.0)
0.159(4.03)
0.112(2.84)
0.350(8.9)
0.054(1.37)
0.036(0.91)
0.102(2.59)
0.184(4.67)
0.054(1.37)
0.110(2.8)
0.021(0.48)
0.155(3.94)
150OC
0.53V
F
C
D
E
B
C
V(Typ)
Marking code
F
G
G
H
I
1
2
3
C
M
H
E
J
■ Features
I
K
D
L
M
N
ØP
• Low forward voltage drop.
• Excellent high temperature stability.
• Fast switching capability.
J
N
Alternate
Dimensions in inches(millimeters)
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
K
symbol
Min
0.394(10.0)
0.228(5.8)
Max
0.413(10.5)
0.268(6.8)
L
ØP
A
A
B
F
C
D
E
0.570(14.48) 0.625(15.87)
0.519(13.18) 0.558(14.18)
B
C
■ Mechanical data
0.089(3.5)
0.100(2.54)
0.330(8.38)
0.045(1.15)
0.029(0.75)
0.095(2.42)
0.160(4.07)
0.045(1.15)
0.080(2.04)
0.013(0.33)
0.148(3.75)
0.099(3.9)
0.120(3.04)
0.350(8.9)
0.060(1.52)
0.037(0.95)
0.105(2.66)
0.190(4.82)
0.055(1.39)
0.110(2.8)
Marking code
F
G
• Epoxy : UL94-V0 rated flame retardant.
• Case : JEDEC TO-220AB molded plastic body.
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026.
• Polarity: As marked.
• Mounting Position : Any.
G
H
I
1
2
3
M
H
E
J
I
K
D
L
M
N
ØP
0.019(0.52)
0.156(3.95)
J
N
PIN 2
• Weight : Approximated 2.25 gram.
PIN 1
PIN 3
■ Maximum ratings and electrical characteristics
Dimensions in inches and (millimeters)
Rating at 25OC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Parameter
Marking code
Conditions
Symbol
CS30L60CT-A
CS30L60CT
UNIT
V
Peak repetitive reverse voltage
Working peak reverse voltage
DC blocking voltage
VRRM
VRWM
VRM
IO
60
Forward rectified current (total device)
30
A
A
8.3ms single half sine-wave superimposed on
rate load (JEDEC method)
Forward surge current (per diode)
IFSM
IRRM
EAS
280
Peak repetitive reverse surge current
(per diode)
2us - 1kHz
3
A
mJ
W
Non-repetitive avalanche energy
(per diode)
TJ = 25OC, IAS = 20A, L = 8.5mH, tp = 1ms
400
8600
Repetitive peak avalanche energy
(per diode)
1us, 25OC
PARM
OC/W
OC
RθJC
Thermal resistance(1)
Junction to case
4
Operating and Storage temperature
TJ, TSTG
-55 ~ +150
Parameter
Conditions
IF = 15A, TJ = 25OC
IF = 15A, TJ = 125OC
VR = VRRM TJ = 25OC
VR = VRRM TJ = 125OC
Symbol
VF
MIN.
TYP.
530
MAX.
UNIT
mV
600
550
0.5
60
Forward voltage drop (per diode)
IR
Reverse current (per diode)
mA
Note : 1.Thermal resistance from junction to case per leg, with heatsink size(1.35" x 0.95" x 0.18") Al-plate.
Document ID : DS-11K9Y
Revised Date : 2015/08/10
Revision : C7
1
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