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CS202-4MLEADFREE PDF预览

CS202-4MLEADFREE

更新时间: 2024-11-09 13:02:11
品牌 Logo 应用领域
CENTRAL /
页数 文件大小 规格书
2页 76K
描述
Silicon Controlled Rectifier, 4A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-202AB, PLASTIC, TO-202, 3 PIN

CS202-4MLEADFREE 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete零件包装代码:SFM
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantHTS代码:8541.30.00.80
风险等级:5.17Is Samacsys:N
外壳连接:ANODE配置:SINGLE
最大直流栅极触发电流:0.2 mAJEDEC-95代码:TO-202AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):260
认证状态:Not Qualified最大均方根通态电流:4 A
断态重复峰值电压:600 V重复峰值反向电压:600 V
表面贴装:NO端子面层:MATTE TIN (315)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:10触发设备类型:SCR
Base Number Matches:1

CS202-4MLEADFREE 数据手册

 浏览型号CS202-4MLEADFREE的Datasheet PDF文件第2页 
TM  
CS202-4B  
CS202-4D  
CS202-4M  
CS202-4N  
Central  
Semiconductor Corp.  
4.0 AMP SCR  
200 THRU 800 VOLTS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CS202-4B  
series type is an Epoxy Molded Silicon Controlled  
Rectifier designed for sensing circuit applications  
and control systems.  
MARKING CODE: FULL PART NUMBER  
TO-202 THYRISTOR CASE  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
C
SYMBOL  
CS202  
-4B  
200  
CS202  
-4D  
400  
CS202 CS202  
-4M  
-4N  
UNITS  
V
A
A
A2s  
W
W
A
A/µs  
°C  
Peak Repetitive Off-State Voltage  
V
V
600  
800  
DRM, RRM  
RMS On-State Current (T =85°C)  
I
I
4.0  
30  
C
T(RMS)  
TSM  
Peak One Cycle Surge (t=10ms)  
I2t Value for Fusing (t=10ms)  
Peak Gate Power (tp=20µs)  
Average Gate Power Dissipation  
Peak Gate Current (tp=20µs)  
Critical Rate of Rise of On-State Current  
Storage Temperature  
I2t  
4.5  
3.0  
0.2  
1.2  
50  
P
P
GM  
G(AV)  
GM  
I
di/dt  
T
T
Θ
Θ
-40 to +150  
-40 to +125  
80  
stg  
J
JA  
JC  
Junction Temperature  
Thermal Resistance  
Thermal Resistance  
°C  
°C/W  
°C/W  
7.5  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
C
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
10  
200  
200  
2.0  
UNITS  
µA  
µA  
µA  
mA  
V
I
I
I
I
V
V
I
I
Rated V  
Rated V  
V
R
=1KΩ  
DRM, RRM  
DRM, RRM, GK  
, V =1KΩ, T =125°C  
R
DRM, RRM  
DRM DRM, GK  
C
V =12V, R =10Ω  
20  
38  
0.25  
0.55  
1.6  
GT  
H
GT  
TM  
D
T
L
GK  
L
I =50mA, R =1KΩ  
V =12V, R =10Ω  
0.8  
1.8  
D
I
=8.0A, tp=380µs  
2
V
V/µs  
TM  
dv/dt  
V = / V  
R
=1KΩ, T =125°C  
10  
3
D
DRM, GK  
C
R3 (14-September 2004)  

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