5秒后页面跳转
CS20-22MOF1 PDF预览

CS20-22MOF1

更新时间: 2024-11-09 09:32:15
品牌 Logo 应用领域
IXYS 栅极触发装置可控硅整流器高压
页数 文件大小 规格书
2页 79K
描述
High Voltage Phase Control Thyristorin High Voltage ISOPLUS i4-PAC-TM

CS20-22MOF1 技术参数

是否无铅: 不含铅生命周期:Transferred
零件包装代码:ISOPLUS包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:unknown
HTS代码:8541.30.00.80风险等级:5.69
其他特性:HIGH RELIABILITY外壳连接:ISOLATED
配置:SINGLE关态电压最小值的临界上升速率:2500 V/us
最大直流栅极触发电流:250 mA最大直流栅极触发电压:2.3 V
最大维持电流:150 mAJESD-30 代码:R-PSIP-T3
JESD-609代码:e1最大漏电流:0.05 mA
通态非重复峰值电流:200 A元件数量:1
端子数量:3最大通态电流:18000 A
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大均方根通态电流:28.26 A
断态重复峰值电压:2200 V重复峰值反向电压:2200 V
子类别:Silicon Controlled Rectifiers表面贴装:NO
端子面层:TIN SILVER COPPER端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
触发设备类型:SCRBase Number Matches:1

CS20-22MOF1 数据手册

 浏览型号CS20-22MOF1的Datasheet PDF文件第2页 
Advanced Technical Information  
CS 20-22moF1  
V = VRRM = 2200 V  
High Voltage  
Phase Control  
DRM  
I
I
= 18 A  
= 200 A  
T(AV)  
TSM  
Thyristor  
in High Voltage  
ISOPLUS i4-PACTM  
VRSM  
VDSM  
VRRM  
VDRM  
Type  
V
V
1
2100  
2000  
CS 20-22moF1  
5
Features  
Thyristors  
• high voltage thyristor  
- for line frequency  
- chip technology for long term  
stability  
Symbol  
Conditions  
Maximum Ratings  
VDRM, VRRM  
2200  
V
IT(AV)  
IT(AV)  
sine 180°; TC = 90°C  
18  
16  
A
A
• ISOPLUS i4-PACTM  
high voltage package  
- isolated back surface  
- enlarged creepage towards heatsink  
- enlarged creepage between high  
voltage pins  
square; d = 1/3; TC = 90°C  
ITSM  
sine 180°; t = 10 ms; VR = 0 V; TVJ = 25°C  
200  
100  
A
(di/dt)cr  
TVJ = TVJM  
f = 50 Hz, tP = 200 µs  
VD = 2/3 VDRM  
IG = 0.45 A  
repetitive, IT = 40 A  
A/µs  
- application friendly pinout  
- high reliability  
- industry standard outline  
non repetitive, IT = 20 A  
VDR = 2/3 VDRM  
250  
A/µs  
V/µs  
diG/dt = 0.45 A/µs  
(dv/dt)cr  
Symbol  
TVJ = TVJM  
;
2500  
RGK = ¥; method 1 (linear voltage rise)  
Applications  
Conditions  
Characteristic Values  
(TVJ = 25°C, unless otherwise specified)  
min. typ. max.  
• controlled rectifiers  
- power supplies  
- drives  
• AC switches  
• capacitor discharge control  
- flash tubes  
VT  
IT = 20 A; TVJ = 25°C  
TVJ =125°C  
1.3  
1.3  
1.5  
V
V
VGT  
IGT  
VD = 6 V  
2.3  
250 mA  
V
- x ray and laser generators  
VGD  
IGD  
TVJ = TVJM; VD = 2/3 VDRM  
0.2 V  
5 mA  
IL  
tP = 10 ms; VD = 6 V  
500 mA  
IG = 0.45 A; diG/dt = 0.45 A/µs  
IH  
VD = 6 V; RGK = ¥  
150 mA  
tgd  
VD = ½ VDRM  
2
µs  
IG = 0.45 A; diG/dt = 0.45 A/µs  
IR, ID  
RthJC  
VR = VRRM; VD = VDRM;TVJ = 25°C  
TVJ = 125°C  
50 µA  
mA  
2
DC current  
0.92 K/W  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2000 IXYS All rights reserved  
1 - 2  

与CS20-22MOF1相关器件

型号 品牌 获取价格 描述 数据表
CS202-4B CENTRAL

获取价格

SCRs
CS202-4B-2 CENTRAL

获取价格

SCRs
CS202-4B-2LEADFREE CENTRAL

获取价格

Silicon Controlled Rectifier, 4A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, TO-202AB, P
CS202-4D CENTRAL

获取价格

SCRs
CS202-4D-2 CENTRAL

获取价格

SCRs
CS202-4D-2PBFREE CENTRAL

获取价格

Silicon Controlled Rectifier,
CS202-4DLEADFREE CENTRAL

获取价格

Silicon Controlled Rectifier, 4A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-202AB, P
CS202-4M CENTRAL

获取价格

SCRs
CS202-4M-2 CENTRAL

获取价格

SCRs
CS202-4M-2LEADFREE CENTRAL

获取价格

Silicon Controlled Rectifier, 4A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-202AB, P