Datasheet > CS17N10 A4-G

CS17N10 A4-G

更新时间： 2024-04-09 19:00:17

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	507K
描述
TO-252(或DPAK)

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CS17N10 A4-G 数据手册

Silicon N-Channel Power MOSFET

CS17N10 A4-G

○

General Description：

V_DSS

100

CS17N10 A4-G, the silicon N-channel Enhanced

VDMOSFETs, is obtained by the high density Trench

technology which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. This device is

suitable for use as a load switch and PWM applications. The

package form is TO-252, which accords with the RoHS standard.

Features：

I_D

56.8

R_DS(ON)Typ

mΩ

l Fast Switching

l Low ON Resistance(Rdson≤67 mΩ)

l Low Gate Charge

l Low Reverse transfer capacitances

l 100% Single Pulse avalanche energy Test

l Halogen Free

Applications：

Power switch circuit of adaptor and charger.

Absolute（Tj= 25℃ unless otherwise specified）

Parameter

Symbol

V_DSS

Rating

Units

Drain-to-Source Voltage

100

Continuous Drain Current T_C= 25 °C

Continuous Drain Current T_C= 100 °C

Pulsed Drain Current T_C= 25 °C

Gate-to-Source Voltage

I_D

13.7

±20

I_DM

V_GS

Avalanche Energy

46.9

E_AS

Power Dissipation T_C= 25 °C

Derating Factor above 25°C

56.8

P_D

0.454

W/℃

℃

Operating Junction and Storage Temperature Range

T_J，T_stg

150，–55 to 150

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