Silicon N-Channel Power MOSFET
CS14N25F A9R
R
○
General Description:
VDSS
250
V
A
ID
14
35
CS14N25F A9R, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220F, which accords with the RoHS standard.
Features:
PD(TC=25℃)
RDS(ON)Typ
W
Ω
0.20
l Fast Switching
l Low ON Resistance(Rdson≤0.25Ω)
l Low Gate Charge (Typical Data:22.7nC)
l Low Reverse transfer capacitances(Typical:13pF)
l 100% Single Pulse avalanche energy Test
Applications:
Power switch circuit of adaptor and charger.
Absolute(TJ= 25℃ unless otherwise specified):
Parameter
Symbol
VDSS
Rating
Units
Drain-to-Source Voltage
250
V
A
Continuous Drain Current TC = 25 °C
Continuous Drain Current TC = 100 °C
Pulsed Drain Current TC = 25 °C
Gate-to-Source Voltage
14
ID
8.4
A
a1
56
A
IDM
VGS
V
±30
a2
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
500
mJ
V/ns
W
EAS
a3
5.0
dv/dt
Power Dissipation TC = 25 °C
Derating Factor above 25°C
35
0.28
PD
W/℃
℃
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
TJ,Tstg
150,–55 to 150
300
TL
℃
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2019V01