Datasheet > CS14N10A4

CS14N10A4

更新时间： 2024-11-19 17:01:47

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
9页	462K
描述
TO-252(或DPAK)

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CS14N10A4 数据手册

Silicon N-Channel Power MOSFET

CS14N10 A4

○

General Description：

V_DSS

100

CS14N10 A4, the silicon N-channel Enhanced

VDMOSFETs, is obtained by the high density Trench

technology which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. This device is

suitable for use as a load switch and PWM applications. The

package form is TO-252, which accords with the RoHS standard.

Features：

I_D

43.1

113

R_DS(ON)Typ

mΩ

l Fast Switching

l Low ON Resistance(Rdson≤150 mΩ)

l Low Gate Charge

l Low Reverse transfer capacitances

l 100% Single Pulse avalanche energy Test

Applications：

Power switch circuit of adaptor and charger.

Absolute（TC= 25℃ unless otherwise specified）

Parameter

Symbol

V_DSS

Rating

Units

Drain-to-Source Voltage

100

Continuous Drain Current

Continuous Drain Current T_C= 100 °C

Pulsed Drain Current

14.0

I_D

8.2

I_DM

Gate-to-Source Voltage

V_GS

±20

Avalanche Energy

28.8

E_AS

Avalanche Current

7.6

43.1

I_AS

Power Dissipation

P_D

Derating Factor above 25°C

Operating Junction and Storage Temperature Range

MaximumTemperature for Soldering

0.34

W/℃

℃

T_J，T_stg

150，–55 to 150

300

T_L

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 9

2017V01

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