Datasheet > CS14N10A3

CS14N10A3

更新时间： 2024-03-03 10:10:44

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
9页	456K
描述
TO-251

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

CS14N10A3 数据手册

Silicon N-Channel Power MOSFET

CS14N10 A3

○

General Description：

V_DSS

100

CS14N10 A3, the silicon N-channel Enhanced

VDMOSFETs, is obtained by the high density Trench

technology which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. This device is

suitable for use as a load switch and PWM applications. The

package form is TO-251, which accords with the RoHS standard.

Features：

I_D

43.1

113

R_DS(ON)Typ

mΩ

l Fast Switching

l Low ON Resistance(Rdson≤150 mΩ)

l Low Gate Charge

l Low Reverse transfer capacitances

l 100% Single Pulse avalanche energy Test

Applications：

Power switch circuit of adaptor and charger.

Absolute（TC= 25℃ unless otherwise specified）

Parameter

Symbol

V_DSS

Rating

Units

Drain-to-Source Voltage

100

Continuous Drain Current

Continuous Drain Current T_C= 100 °C

Pulsed Drain Current

14.0

I_D

8.2

I_DM

Gate-to-Source Voltage

V_GS

±20

Avalanche Energy

28.8

E_AS

Avalanche Current

7.6

43.1

I_AS

Power Dissipation

P_D

Derating Factor above 25°C

Operating Junction and Storage Temperature Range

MaximumTemperature for Soldering

0.34

W/℃

℃

T_J，T_stg

150，–55 to 150

300

T_L

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 9

2017V01

12 3 4 5 6 7...9

中文翻译

下载PDF

与CS14N10A3相关器件

型号	品牌	获取价格	描述	数据表
CS14N10A4	CRMICRO	获取价格	TO-252(或DPAK)
CS14N25A0R	CRMICRO	获取价格	TO-263(或D2PAK)
CS14N25A4R	CRMICRO	获取价格	TO-252(或DPAK)
CS14N25A8R	CRMICRO	获取价格	TO-220
CS14N25FA9R	CRMICRO	获取价格	TO-220F
CS-14-S-2-S-ST2	SAMTEC	获取价格	Interconnection Device
CS-14-S-2-S-ST3	SAMTEC	获取价格	Interconnection Device
CS-14-S-2-S-ST8	SAMTEC	获取价格	Interconnection Device
CS-14-S-2-S-T	SAMTEC	获取价格	Interconnection Device
CS-14-S-2-T-ST8	SAMTEC	获取价格	Interconnection Device