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CS14N06AQ2-1 PDF预览

CS14N06AQ2-1

更新时间: 2024-10-15 18:09:39
品牌 Logo 应用领域
华润微 - CRMICRO /
页数 文件大小 规格书
10页 458K
描述
DFN3x3D

CS14N06AQ2-1 数据手册

 浏览型号CS14N06AQ2-1的Datasheet PDF文件第2页浏览型号CS14N06AQ2-1的Datasheet PDF文件第3页浏览型号CS14N06AQ2-1的Datasheet PDF文件第4页浏览型号CS14N06AQ2-1的Datasheet PDF文件第5页浏览型号CS14N06AQ2-1的Datasheet PDF文件第6页浏览型号CS14N06AQ2-1的Datasheet PDF文件第7页 
Silicon N-Channel Power MOSFET  
CS14N06 AQ2-1  
R
General Description  
VDSS  
60  
14  
V
A
CS14N06 AQ2-1, the silicon N-channel Enhanced  
VDMOSFETs, is obtained by the high density Trench  
technology which reduce the conduction loss, improve switching  
performance and enhance the avalanche energy. This device is  
suitable for use as a load switch and PWM applications.. The  
package form is DFN3×3-8L, which accords with the RoHS  
standard.  
ID  
PD  
13.8  
36  
W
RDS(ON)Typ  
mΩ  
Features  
Top View  
l Fast Switching  
l Low ON Resistance(Rdson45m)  
l Low Gate Charge  
l Low Reverse transfer capacitances  
l 100% Single Pulse avalanche energy Test  
Applications:  
Power switch circuit of adaptor and charger.  
AbsoluteTj= 25unless otherwise specified)  
Parameter  
Symbol  
VDSS  
Rating  
Units  
Drain-to-Source Voltage  
60  
V
A
Continuous Drain Current Tc= 25°C  
Continuous Drain Current Tc = 100 °C  
Pulsed Drain Current Tc= 25°C  
Gate-to-Source Voltage  
14  
ID  
8.8  
A
a1  
56  
A
IDM  
VGS  
±20  
V
a2  
Avalanche Energy  
54  
13.8  
mJ  
W
EAS  
Power Dissipation Tc= 25°C  
Derating Factor above 25°C  
PD  
0.11  
W/  
Operating Junction and Storage Temperature Range  
TJTstg  
15055 to 150  
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10  
2019V01  

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