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CRZ27(TE85L,Q,M) PDF预览

CRZ27(TE85L,Q,M)

更新时间: 2024-02-04 16:10:05
品牌 Logo 应用领域
东芝 - TOSHIBA 光电二极管
页数 文件大小 规格书
5页 157K
描述
X35 PB-F DIODE S-FLAT MOQ=3000 V=30 PD=0.7W

CRZ27(TE85L,Q,M) 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:unknown风险等级:5.74
Base Number Matches:1

CRZ27(TE85L,Q,M) 数据手册

 浏览型号CRZ27(TE85L,Q,M)的Datasheet PDF文件第2页浏览型号CRZ27(TE85L,Q,M)的Datasheet PDF文件第3页浏览型号CRZ27(TE85L,Q,M)的Datasheet PDF文件第4页浏览型号CRZ27(TE85L,Q,M)的Datasheet PDF文件第5页 
CRY62~CRZ47  
TOSHIBA Zener Diode Silicon Epitaxial Type  
CRY62~CRZ47  
Applications:  
Unit: mm  
Communication, Control and  
Measurement Equipment  
Constant Voltage Regulation  
Transient Suppressors  
z Average power dissipation: P = 0.7 W  
z Zener voltage: V = 6.2~47 V  
Z
z Suitable for compact assembly due to small surface-mount package  
TM  
“SFLAT ” (Toshiba package name)  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Power dissipation  
Symbol  
P
Rating  
Unit  
700  
mW  
°C  
Junction temperature  
T
j
40 ~ 150  
40 ~ 150  
JEDEC  
JEITA  
Storage temperature range  
T
stg  
°C  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
TOSHIBA  
3-2A1A  
Weight: 0.013 g (typ.)  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report  
and estimated failure rate, etc).  
Standard Soldering Pad  
Unit: mm  
1.2  
1.2  
2.8  
1
2006-11-09  

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