Datasheet > CRZ10(TE85L,Q,M)

CRZ10(TE85L,Q,M)

更新时间： 2024-11-21 14:48:39

品牌	Logo	应用领域
东芝 - TOSHIBA		光电二极管
页数	文件大小	规格书
5页	357K
描述
X35 PB-F DIODE S-FLAT MOQ=3000 V=10 PD=0.7W

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中文翻译

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技术参数
数据手册

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CRZ10(TE85L,Q,M) 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.74
Base Number Matches：	1

CRZ10(TE85L,Q,M) 数据手册

CRY62 to CRZ39

TOSHIBA Zener Diode Silicon Epitaxial Type

CRY62 to CRZ39

○ Surge absorber

Unit: mm

 Average power dissipation : P = 0.7 W

 Zener voltage : V = 6.2 to 39 V

 Suitable for compact assembly due to small surface-mount package

“S−FLAT ” (Toshiba package name)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Power dissipation

Symbol

Rating

Unit

0.7

°C

Junction temperature

−40 to 150

Storage temperature range

stg

JEDEC

―

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

JEITA

TOSHIBA

3-2A1S

Weight: 0.013 g (typ.)

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Land Pattern Dimensions (reference only)

Unit: mm

1.2

2.8

Start of commercial production

1999-09

2014-10-09

12 3 4 5

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