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CRZ10(TE85L,Q)

更新时间: 2024-02-23 01:27:05
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
5页 362K
描述
DIODE ZENER 10V 700MW 3-2A1A

CRZ10(TE85L,Q) 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:unknown风险等级:5.74
Base Number Matches:1

CRZ10(TE85L,Q) 数据手册

 浏览型号CRZ10(TE85L,Q)的Datasheet PDF文件第2页浏览型号CRZ10(TE85L,Q)的Datasheet PDF文件第3页浏览型号CRZ10(TE85L,Q)的Datasheet PDF文件第4页浏览型号CRZ10(TE85L,Q)的Datasheet PDF文件第5页 
CRY62 to CRZ39  
TOSHIBA Zener Diode Silicon Epitaxial Type  
CRY62 to CRZ39  
Surge absorber  
Unit: mm  
Average power dissipation : P = 0.7 W  
Zener voltage : V = 6.2 to 39 V  
Z
Suitable for compact assembly due to small surface-mount package  
TM  
“S−FLAT ” (Toshiba package name)  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Power dissipation  
Symbol  
P
Rating  
Unit  
0.7  
W
°C  
°C  
Junction temperature  
T
40 to 150  
40 to 150  
j
Storage temperature range  
T
stg  
JEDEC  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
JEITA  
TOSHIBA  
3-2A1S  
Weight: 0.013 g (typ.)  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Land Pattern Dimensions (reference only)  
Unit: mm  
1.2  
1.2  
2.8  
Start of commercial production  
1999-09  
1
2014-10-09  

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