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CRSS022N10N4 PDF预览

CRSS022N10N4

更新时间: 2024-11-18 18:09:47
品牌 Logo 应用领域
华润微 - CRMICRO /
页数 文件大小 规格书
10页 1030K
描述
TO-263(或D2PAK)

CRSS022N10N4 数据手册

 浏览型号CRSS022N10N4的Datasheet PDF文件第2页浏览型号CRSS022N10N4的Datasheet PDF文件第3页浏览型号CRSS022N10N4的Datasheet PDF文件第4页浏览型号CRSS022N10N4的Datasheet PDF文件第5页浏览型号CRSS022N10N4的Datasheet PDF文件第6页浏览型号CRSS022N10N4的Datasheet PDF文件第7页 
CRSS022N10N4  
华润微电子(重庆)有限公司  
SkyMOS4 N-MOSFET 100V, 2.2mΩ, 190A  
Features  
Product Summary  
VDS  
100V  
• Uses CRM(CQ) advanced SkyMOS4 technology  
• Extremely low on-resistance RDS(on)  
• Excellent QgxRDS(on) product(FOM)  
• Qualified according to JEDEC criteria  
RDS(on).typ  
ID  
2.2mΩ  
190A  
100% DVDS Tested  
100% Avalanche Tested  
Applications  
• Motor control and drive  
• Battery management System  
• UPS (Uninterrupible Power Supplies)  
CRSS022N10N4  
Package Marking and Ordering Information  
Part #  
Marking  
Package  
TO-263  
Packing  
Tape  
Reel Size Tape Width  
Qty  
CRSS022N10N4  
CRSS022N10N4  
N/A  
N/A  
1000pcs  
Absolute Maximum Ratings  
Parameter  
Symbol  
Value  
Unit  
VDS  
Drain-source voltage  
100  
V
Continuous drain current  
TC = 25°C (Silicon limit)  
TC = 25°C (Package limit)  
TC = 100°C (Silicon limit)  
280  
190  
ID  
A
175  
Pulsed drain current (TC = 25°C, tp limited by Tjmax  
Avalanche energy, single pulse (ID = 87A, Rg=25)[1]  
)
ID pulse  
EAS  
760  
A
mJ  
V
1498  
±20  
VGS  
Gate-Source voltage  
Power dissipation (TC = 25°C)  
Ptot  
343  
W
°C  
Tj , T stg  
Operating junction and storage temperature  
-55...+150  
Soldering temperature, wave soldering only allowed at leads  
(1.6mm from case for 10s)  
Tsold  
245  
°C  
. Notes:  
1.EAS is tested at starting Tj = 25, L = 0.5mH, IAS =77A, VGS = 10V.  
2.Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low  
frequency and duty cycles to keep initial TJ =25°C.  
Rev 0.2  
©China Resources Microelectronics (Chongqing) Limited  
Page 1  

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