CRSS022N10N4
华润微电子(重庆)有限公司
SkyMOS4 N-MOSFET 100V, 2.2mΩ, 190A
Features
Product Summary
VDS
100V
• Uses CRM(CQ) advanced SkyMOS4 technology
• Extremely low on-resistance RDS(on)
• Excellent QgxRDS(on) product(FOM)
• Qualified according to JEDEC criteria
RDS(on).typ
ID
2.2mΩ
190A
100% DVDS Tested
100% Avalanche Tested
Applications
• Motor control and drive
• Battery management System
• UPS (Uninterrupible Power Supplies)
CRSS022N10N4
Package Marking and Ordering Information
Part #
Marking
Package
TO-263
Packing
Tape
Reel Size Tape Width
Qty
CRSS022N10N4
CRSS022N10N4
N/A
N/A
1000pcs
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
VDS
Drain-source voltage
100
V
Continuous drain current
TC = 25°C (Silicon limit)
TC = 25°C (Package limit)
TC = 100°C (Silicon limit)
280
190
ID
A
175
Pulsed drain current (TC = 25°C, tp limited by Tjmax
Avalanche energy, single pulse (ID = 87A, Rg=25Ω)[1]
)
ID pulse
EAS
760
A
mJ
V
1498
±20
VGS
Gate-Source voltage
Power dissipation (TC = 25°C)
Ptot
343
W
°C
Tj , T stg
Operating junction and storage temperature
-55...+150
Soldering temperature, wave soldering only allowed at leads
(1.6mm from case for 10s)
Tsold
245
°C
※. Notes:
1.EAS is tested at starting Tj = 25℃, L = 0.5mH, IAS =77A, VGS = 10V.
2.Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low
frequency and duty cycles to keep initial TJ =25°C.
Rev 0.2
©China Resources Microelectronics (Chongqing) Limited
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