Datasheet > CRS20I30A

CRS20I30A

更新时间： 2024-11-20 14:56:35

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
6页	169K
描述
30 V/2 A Schottky Barrier Diode, S-FLAT

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CRS20I30A 数据手册

CRS20I30A

TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type

CRS20I30A

Secondary Rectification in Switching Regulators

Unit: mm

Reverse-Current Protection in Mobile Devices

②

•

Forward voltage: V

= 0.49 V (max) @ I

= 2.0 A

Forward current (AV): I

= 2.0 A

F (AV)

Repetitive peak reverse voltage: V

= 30 V

RRM

Suitable for high-density board assembly due to the use of a small

surface-mount package, “S-FLAT

”

0.9 ± 0.1

0.16

Absolute Maximum Ratings (Ta = 25°C)

+ 0.2

− 0.1

①

1.6

Characteristics

Symbol

Rating

Unit

Repetitive peak reverse voltage

Forward current (AV)

RRM

① ANODE

② CATHODE

2.0 (Note 1)

20 (50 Hz)

150

F (AV)

Peak one-cycle surge current

Junction temperature

FSM

°C

JEDEC

JEITA

⎯

Storage temperature

-55 to 150

stg

Note : Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

TOSHIBA

3-2A1A

Weight: 0.013 g (typ.)

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Ta = 48°C : Device mounted on a ceramic board

Board size : 50 mm × 50 mm

Soldering size : 2 mm × 2 mm

Board thickness: 0.64 mm

Rectangular waveform (α = 180°), V = 15 V

2011-05-06

12 3 4 5 6

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