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CRS15I40A PDF预览

CRS15I40A

更新时间: 2024-11-23 14:57:23
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
7页 281K
描述
40 V/1.5 A Schottky Barrier Diode, S-FLAT

CRS15I40A 技术参数

生命周期:Active包装说明:THIN, S-FLAT, 3-2A1S, 2 PIN
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.81
应用:GENERAL PURPOSE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.55 VJESD-30 代码:R-PDSO-F2
最大非重复峰值正向电流:20 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最大输出电流:1.5 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE最大重复峰值反向电压:40 V
最大反向电流:60 µA反向测试电压:40 V
表面贴装:YES技术:SCHOTTKY
端子形式:FLAT端子位置:DUAL

CRS15I40A 数据手册

 浏览型号CRS15I40A的Datasheet PDF文件第2页浏览型号CRS15I40A的Datasheet PDF文件第3页浏览型号CRS15I40A的Datasheet PDF文件第4页浏览型号CRS15I40A的Datasheet PDF文件第5页浏览型号CRS15I40A的Datasheet PDF文件第6页浏览型号CRS15I40A的Datasheet PDF文件第7页 
CRS15I40A  
Schottky Barrier Diode  
CRS15I40A  
1. Applications  
Secondary Rectification in Switching Regulators  
Reverse-Current Protection in Mobile Devices  
2. Features  
(1) Peak forward voltage: VFM = 0.55 V (max) @IFM = 1.5 A  
(2) Average forward current: IF(AV) = 1.5 A  
(3) Repetitive peak reverse voltage: VRRM = 40 V  
(4) Small, thin package suitable for high-density board assembly  
Toshiba Nickname: S-FLATTM  
3. Packaging and Internal Circuit  
1: Anode  
2: Cathode  
3-2A1S  
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )  
Characteristics  
Repetitive peak reverse voltage  
Symbol  
Note  
Rating  
Unit  
VRRM  
IF(AV)  
IFSM  
Tj  
40  
1.5  
V
A
Average forward current  
(Note 1)  
(Note 2)  
Non-repetitive peak forward surge current  
Junction temperature  
20  
150  
Storage temperature  
Tstg  
-55 to 150  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note 1: T= 118 , square wave (α = 180°), VR = 20 V  
Note 2: f = 50 Hz, half-sine wave  
Start of commercial production  
2010-10  
2014-03-28  
Rev.1.0  
1

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