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CRS14(TE85L,Q) PDF预览

CRS14(TE85L,Q)

更新时间: 2024-11-06 20:04:43
品牌 Logo 应用领域
东芝 - TOSHIBA 二极管
页数 文件大小 规格书
6页 185K
描述
RECTIFIER DIODE,SCHOTTKY,30V V(RRM),UMD2VAR

CRS14(TE85L,Q) 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.84
配置:SINGLE二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.49 V最大非重复峰值正向电流:30 A
元件数量:1最高工作温度:150 °C
最大输出电流:2 A最大重复峰值反向电压:30 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKYBase Number Matches:1

CRS14(TE85L,Q) 数据手册

 浏览型号CRS14(TE85L,Q)的Datasheet PDF文件第2页浏览型号CRS14(TE85L,Q)的Datasheet PDF文件第3页浏览型号CRS14(TE85L,Q)的Datasheet PDF文件第4页浏览型号CRS14(TE85L,Q)的Datasheet PDF文件第5页浏览型号CRS14(TE85L,Q)的Datasheet PDF文件第6页 
CRS14  
TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type  
CRS14  
Switching Mode Power Supply Applications  
Unit: mm  
Portable Equipment Battery Applications  
Forward voltage: V  
= 0.49 V (max) @ I = 2.0 A  
FM F  
Average forward current: I  
= 2.0 A  
F (AV)  
Repetitive peak reverse voltage: V  
= 30 V  
RRM  
Suitable for high-density board assembly due to the use of a small  
TM  
surface-mount package, “S-FLAT  
0.9 ± 0.1  
0.16  
Absolute Maximum Ratings (Ta = 25°C)  
+ 0.2  
0.1  
1.6  
Characteristics  
Symbol  
Rating  
Unit  
Repetitive peak reverse voltage  
Average forward current  
V
30  
V
A
RRM  
ANODE  
CATHODE  
I
2.0 (Note 1)  
F (AV)  
Peak one cycle surge forward current  
(non-repetitive)  
I
30 (50 Hz)  
A
FSM  
JEDEC  
JEITA  
Junction temperature  
Storage temperature  
T
40 to 150  
40 to 150  
°C  
°C  
j
T
stg  
TOSHIBA  
3-2A1A  
Note 1: Ta = 64°C : Device mounted on a ceramic board  
Board size : 50 mm × 50 mm  
Weight: 0.013 g (typ.)  
Soldering size : 2 mm × 2 mm  
Board thickness : 0.64 mm  
Rectangular waveform (α = 180°), V = 15 V  
R
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly  
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute  
maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
1
2009-04-20  

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