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CRG25T135BKR3S PDF预览

CRG25T135BKR3S

更新时间: 2024-11-19 17:02:11
品牌 Logo 应用领域
华润微 - CRMICRO /
页数 文件大小 规格书
9页 859K
描述
TO-247

CRG25T135BKR3S 数据手册

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Silicon FS Trench IGBT  
CRG25T135BKR3S  
General Description  
VCES  
1350  
25  
V
A
Using CRM's proprietary trench design, advanced FS(field stop)  
technology and integrated with Free Wheeling Diode, the 1350V Trench FS  
IGBT offers superior conduction and switching performances, high  
avalanche ruggedness.  
IC  
Ptot (TC=25)  
VCE(SAT)  
208  
1.95  
W
V
TO-247  
Features  
Trench FS Technology, Positive temperature coefficient  
Low saturation voltage: VCE(sat), typ =1.95V  
@ IC =25A  
Extremely enhanced avalanche capability  
Applications:  
Power switch circuit of induction cooker(IH).  
Ordering Information  
Part Number  
Package  
Marking  
Delivery mode  
CRG25T135BKR3S  
TO-247  
G25T135BKR3S  
Tube  
Absolute Maximum Ratings  
Tj= 25unless otherwise specified:  
Parameter  
Symbol  
VCES  
Rating  
Units  
Collector-Emitter Voltage  
1350  
V
V
Gate- Emitter Voltage  
VGES  
±20  
Collector Current@TC = 25 °C  
Collector Current @TC = 100 °C  
Pulsed Collector Current@TC = 25 °C  
50  
A
IC  
25  
A
a1  
75  
A
ICM  
Diode Continuous Forward Current @TC = 100 °C  
Diode Maximum Forward Current@TC = 25 °C  
Power Dissipation @ TC = 25°C  
IF  
25  
A
IFM  
75  
A
208  
W
W
PD  
Power Dissipation @TC = 100 °C  
83  
150-55 to +150  
300  
Operating Junction and Storage Temperature Range  
TJTstg  
Maximum Temperature for Soldering  
TL  
a1Repetitive rating; pulse width limited by maximum junction temperature  
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.  
Page 1 of 9  
2021V01  

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