Silicon FS Trench IGBT
CRG25T135BKR3S
General Description:
VCES
1350
25
V
A
Using CRM's proprietary trench design, advanced FS(field stop)
technology and integrated with Free Wheeling Diode, the 1350V Trench FS
IGBT offers superior conduction and switching performances, high
avalanche ruggedness.
IC
Ptot (TC=25℃)
VCE(SAT)
208
1.95
W
V
TO-247
Features:
Trench FS Technology, Positive temperature coefficient
Low saturation voltage: VCE(sat), typ =1.95V
@ IC =25A
Extremely enhanced avalanche capability
Applications:
Power switch circuit of induction cooker(IH).
Ordering Information
Part Number
Package
Marking
Delivery mode
CRG25T135BKR3S
TO-247
G25T135BKR3S
Tube
Absolute Maximum Ratings
(Tj= 25℃ unless otherwise specified):
Parameter
Symbol
VCES
Rating
Units
Collector-Emitter Voltage
1350
V
V
Gate- Emitter Voltage
VGES
±20
Collector Current@TC = 25 °C
Collector Current @TC = 100 °C
Pulsed Collector Current@TC = 25 °C
50
A
IC
25
A
a1
75
A
ICM
Diode Continuous Forward Current @TC = 100 °C
Diode Maximum Forward Current@TC = 25 °C
Power Dissipation @ TC = 25°C
IF
25
A
IFM
75
A
208
W
W
℃
℃
PD
Power Dissipation @TC = 100 °C
83
150,-55 to +150
300
Operating Junction and Storage Temperature Range
TJ,Tstg
Maximum Temperature for Soldering
TL
a1:Repetitive rating; pulse width limited by maximum junction temperature
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.
Page 1 of 9
2021V01