Datasheet > CRF03A

CRF03A

更新时间： 2023-12-20 18:44:48

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
7页	298K
描述
600 V/0.7 A Rectifier Diode, S-FLAT

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CRF03A 数据手册

CRF03A

Fast Recovery Diode (FRD) Silicon Diffused Junction

CRF03A

1. Applications

•

High-Speed Rectification (Fast recovery)

2. Features

(1) Repetitive peak reverse voltage: VRRM = 600 V

(2) Average forward current: IF(AV) = 0.7 A

(3) Peak forward voltage: VFM = 2.0 V (max) (@IFM = 0.7 A) (pulse measurement)

(4) Reverse recovery time: trr = 100 ns (max) @IF = 1.0 A, di/dt = -30 A/µs

(5) The use of small, thin surface-mount package is optimum way for high-density mounting.

Nickname: S-FLATTM

3. Packaging and Internal Circuit

1: Anode

2: Cathode

S-FLAT

4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25�)

Characteristics

Repetitive peak reverse voltage

Symbol

Rating

Unit

VRRM

IF(AV)

IFSM

600

0.7

Average forward current

(Note 1)

(Note 2)

Non-repetitive peak forward surge current

Junction temperature

150

�

Storage temperature

Tstg

-55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Ta = 82 �, device mounted on a ceramic board

(board size: 50 mm × 50 mm, soldering land size: 2 mm × 2 mm, board thickness: 0.64 mm)

Note 2: f = 50 Hz, half-sine wave, non-repetitive

Start of commercial production

2020-03

Toshiba Electronic Devices & Storage Corporation

2022-03-07

Rev.2.0

12 3 4 5 6 7

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