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CR3-040BK PDF预览

CR3-040BK

更新时间: 2024-11-26 13:07:03
品牌 Logo 应用领域
CENTRAL /
页数 文件大小 规格书
2页 253K
描述
Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, DO-201AD,

CR3-040BK 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.59
应用:GENERAL PURPOSE外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-201AD
JESD-30 代码:O-PALF-W2JESD-609代码:e0
最大非重复峰值正向电流:200 A元件数量:1
相数:1端子数量:2
最大输出电流:3 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:400 V表面贴装:NO
端子面层:TIN LEAD端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

CR3-040BK 数据手册

 浏览型号CR3-040BK的Datasheet PDF文件第2页 
CR3-005GPP SERIES  
GLASS PASSIVATED JUNCTION  
GENERAL PURPOSE  
SILICON RECTIFIER  
3 AMP, 50 THRU 1200 VOLTS  
www.centralsemi.com  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CR3-005GPP  
Series types are 3.0 Amp Glass Passivated Junction  
Silicon Rectifiers which are high quality, well  
constructed, highly reliable components designed  
for use in all types of military, commercial, industrial,  
entertainment, computer, and automotive applications.  
THIS DEVICE IS MANUFACTURED WITH A GLASS  
PASSIVATED CHIP FOR OPTIMUM RELIABILITY.  
DO-201AD CASE  
MARKING: FULL PART NUMBER  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
A
CR3 CR3 CR3 CR3 CR3 CR3 CR3 CR3  
-005 -010 -020 -040 -060 -080 -100 -120  
SYMBOL GPP GPP GPP GPP GPP GPP GPP GPP UNITS  
Peak Repetitive Reverse Voltage  
DC Blocking Voltage  
V
50  
50  
35  
100  
100  
70  
200  
200  
140  
400  
400  
280  
600  
600  
420  
800 1000 1200  
V
V
V
A
A
RRM  
V
800 1000 1200  
R
RMS Reverse Voltage  
V
560  
700  
840  
R(RMS)  
Average Forward Current (T =55°C)  
A
Peak Forward Surge Current  
I
3.0  
O
I
150  
FSM  
Operating and Storage  
Junction Temperature  
T , T  
stg  
-65 to +150  
20  
°C  
J
Thermal Resistance  
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
TYP  
MAX  
UNITS  
I
V =Rated V  
5.0  
µA  
µA  
V
R
R
RRM  
RRM  
I
V =Rated V  
, T =100°C  
100  
1.2  
50  
R
R
A
V
I =3.0A  
F
F
C
V =4.0V, f=1.0MHz  
30  
pF  
J
R
R4 (24-October 2011)  

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