Datasheet > CR100-6

CR100-6

更新时间： 2022-05-26 04:56:17

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APOLLOELECTRON		栅
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描述
Sensitive Gate Silicon Controlled Rectifiers

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CR100-6 数据手册

CR100-6

Sensitive Gate Silicon Controlled Rectifiers

TO-92

Symbol

○ 3. Anode

= 600V

= 1.0A

DRM

T(RMS)

▼

○

= 10A

2.Gate

TSM

○

1.Cathode

Features

◆ Repetitive Peak Off-State Voltage : 600V

◆ R.M.S On-State Current ( I = 1.0 A )

T(RMS)

◆ Low On-State Voltage (1.3V(Typ.))

General Description

Sensitive-gate triggering thyristor is suit able for the application where gate current limited such as

small motor control, gate driver for large thyristor, sensing and detecting circuits.

This device may substitute for MCR100-6, MCR100-8.

Absolute Maximum Ratings ( T_J= 25°C unless otherwise specified )

Symbol

V_DRM

Parameter

Repetitive Peak Off-State Voltage

Average On-State Current

R.M.S On-State Current

Condition

sine wave,50 to 60Hz

Ratings

600

Units

half sine wave : T_C= 83 °C

I_T(AV)

0.5

I_T(RMS)

All Conduction Angle

1.0

1/2 Cycle, 60Hz, sine wave

non-repetitive , t = 8.3ms

I_TSM

Surge On-State Current

I²t

t = 8.3ms

0.415

I²t for Fusing

A²s

P_GM

Forward Peak Gate Power Dissipation

Forward Average Gate Power Dissipation

Forward Peak Gate Current

T_A= 25 °C, pulse width ≤ 1.0㎲

T_A= 25 °C, t = 8.3ms

P_G(AV)

I_FGM

V_RGM

0.1

T_A= 25 °C, pulse width ≤ 1.0㎲

Reverse Peak Gate Voltage

5.0

T_J

Operating Junction Temperature

Storage Temperature

- 40 ~ 110

°C

T_STG

- 40 ~ 150

April, 2010. Rev.1

1/6

12 3 4 5 6

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