Datasheet > CR08AS-12B

CR08AS-12B

更新时间： 2025-08-03 19:25:11

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
6页	122K
描述
元器件封装:SOT-89;

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中文翻译

获取价格

数据手册

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CR08AS-12B 数据手册

SMD Type

Thyristor

Low Power Use

Non-Insulated Type,Glass Passivation Type

CR08AS

Features

IT(AV) :0.8A

VDRM :400V/600V

IGT :100

1 GATE

2 ANODE

3 CATHODE

Absolute Maximum Ratings Ta = 25

Parameter

Repetitive peak reverse voltage

Non-repetitive peak reverse voltage

DC reverse voltage

Symbol

V^RRM

V^RSM

V^R(DC)

V^DRM

V^D(DC)

I^T(RMS)

I^T(AV)

CR08AS-8 CR08AS-12

Unit

400

500

320

400

320

600

720

480

600

480

Repetitive peak off-state voltage *1

DC off-state voltage *1

1.26

0.8

RMS on-state current

Average on-state current

Surge on-state current

I^TSM

I²t

PGM

P^G(AV)

V^FGM

V^RGM

I^FGM

T^j

A²s

I²t for fusing

0.42

0.5

0.1

Peak gate power dissipation

Average gate power dissipation

Peak gate forward voltage

Peak gate reverse voltage

Peak gate forward current

Junction temperature

0.3

-40 to +125

T^stg

Storage temperature

*1 With Gate-to-cathode resistance RGK=1k

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与CR08AS-12B相关器件

型号	品牌	获取价格	描述	数据表
CR08AS-12BC	MITSUBISHI	获取价格	Silicon Controlled Rectifier, 1 Element, SOT-89, 3 PIN
CR08AS-12C	RENESAS	获取价格	SILICON CONTROLLED RECTIFIER,600V V(DRM),800MA I(T),SOT-89
CR08AS-12C	MITSUBISHI	获取价格	Silicon Controlled Rectifier, 800mA I(T), 600V V(DRM)
CR08AS-12_10	RENESAS	获取价格	Thyristor Low Power Use
CR08AS-8	RENESAS	获取价格	SILICON CONTROLLED RECTIFIER,400V V(DRM),800MA I(T),SOT-89
CR08AS-8	KEXIN	获取价格	Triacs
CR08AS-8A	MITSUBISHI	获取价格	Silicon Controlled Rectifier, 800mA I(T), 400V V(DRM)
CR08AS-8A	RENESAS	获取价格	SILICON CONTROLLED RECTIFIER,400V V(DRM),800MA I(T),SOT-89
CR08AS-8AC	MITSUBISHI	获取价格	Silicon Controlled Rectifier, 1 Element, SOT-89, 3 PIN
CR08AS-8B	MITSUBISHI	获取价格	Silicon Controlled Rectifier, 800mA I(T), 400V V(DRM)