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CQD-4M PDF预览

CQD-4M

更新时间: 2024-11-26 03:26:39
品牌 Logo 应用领域
CENTRAL 三端双向交流开关
页数 文件大小 规格书
2页 75K
描述
4.0 AMP TRIAC 600 THRU 800 VOLTS

CQD-4M 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:TO-252
包装说明:SMALL OUTLINE, R-PSSO-G2针数:3
Reach Compliance Code:compliantHTS代码:8541.30.00.80
风险等级:5.8外壳连接:MAIN TERMINAL 2
配置:SINGLEJESD-30 代码:R-PSSO-G2
JESD-609代码:e0元件数量:1
端子数量:2最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大均方根通态电流:4 A断态重复峰值电压:600 V
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED触发设备类型:4 QUADRANT LOGIC LEVEL TRIAC
Base Number Matches:1

CQD-4M 数据手册

 浏览型号CQD-4M的Datasheet PDF文件第2页 
TM  
Central  
CQD-4M  
CQD-4N  
Semiconductor Corp.  
4.0 AMP TRIAC  
600 THRU 800 VOLTS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CQD-4M  
series type is an Epoxy Molded Silicon Triac  
designed for full wave AC control applications  
featuring gate triggering in all four (4) quadrants.  
MARKING CODE: FULL PART NUMBER  
DPAK THYRISTOR CASE  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
C
SYMBOL  
CQD  
-4M  
600  
CQD  
-4N  
800  
UNITS  
V
A
A
A2s  
W
W
A
°C  
°C  
Peak Repetitive Off-State Voltage  
V
DRM  
T(RMS)  
TSM  
RMS On-State Current (T =80°C)  
I
I
I2t  
4.0  
40  
2.4  
3.0  
0.2  
1.2  
C
Peak One Cycle Surge (t=10ms)  
I2t Value for Fusing (t=10ms)  
Peak Gate Power (tp=10µs)  
Average Gate Power Dissipation  
Peak Gate Current (tp=10µs)  
Storage Temperature  
P
P
GM  
G(AV)  
GM  
stg  
J
I
T
T
-40 to +150  
-40 to +125  
Junction Temperature  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
C
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
10  
200  
5.0  
9.0  
5.0  
UNITS  
µA  
µA  
mA  
mA  
mA  
V
I
I
I
I
I
Rated V  
Rated V  
R
=1KΩ  
DRM  
DRM  
GT  
GT  
H
DRM, GK  
, R =1KΩ, T =125°C  
V =12V, QUAD I, II, III  
DRM GK  
C
2.5  
5.4  
1.6  
0.95  
1.25  
D
V =12V, QUAD IV  
D
R
=1KΩ  
GK  
V
V
V =12V, QUAD I, II, III, IV  
1.75  
1.75  
GT  
TM  
D
TM  
I
=6.0A, tp=380µs  
2
V
V/µs  
dv/dt  
V = / V  
T =125°C  
DRM, C  
11  
3
D
R0 (20-May 2004)  

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