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CQ92DTRE PDF预览

CQ92DTRE

更新时间: 2024-11-21 13:07:07
品牌 Logo 应用领域
CENTRAL /
页数 文件大小 规格书
2页 73K
描述
TRIAC, 400V V(DRM), 1A I(T)RMS, TO-92,

CQ92DTRE 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete包装说明:CYLINDRICAL, O-PBCY-T3
Reach Compliance Code:compliantHTS代码:8541.30.00.80
风险等级:5.77配置:SINGLE
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e0元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大均方根通态电流:1 A断态重复峰值电压:400 V
表面贴装:NO端子面层:TIN LEAD
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED触发设备类型:TRIAC
Base Number Matches:1

CQ92DTRE 数据手册

 浏览型号CQ92DTRE的Datasheet PDF文件第2页 
TM  
CQ92B  
CQ92D  
CQ92M  
CQ92N  
Central  
Semiconductor Corp.  
TRIAC  
DESCRIPTION:  
1.0 AMP, 200 THRU 800 VOLTS  
The CENTRAL SEMICONDUCTOR CQ92B  
Series are epoxy molded silicon Triacs designed  
for full wave AC control applications featuring  
gate triggering in all four (4) quadrants.  
MARKING CODE: FULL PART NUMBER  
TO-92 CASE  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
C
SYMBOL  
CQ92B CQ92D  
200 400  
CQ92M CQ92N  
600 800  
UNITS  
V
A
A
A2s  
W
W
A
V
°C  
°C  
°C/W  
°C/W  
Peak Repetitive Off-State Voltage  
V
DRM  
T(RMS)  
TSM  
RMS On-State Current (T =50°C)  
I
I
I2t  
1.0  
20  
C
Peak One Cycle Surge (t=10ms)  
I2t Value for Fusing (t=10ms)  
Peak Gate Power (tp=10µs)  
Average Gate Power Dissipation  
Peak Gate Current (tp=10µs)  
Peak Gate Voltage (tp=10µs)  
Storage Temperature  
2.0  
3.0  
0.2  
1.2  
8.0  
P
P
I
GM  
G (AV)  
GM  
V
T
T
Θ
Θ
GM  
stg  
J
-40 to +150  
-40 to +125  
180  
Junction Temperature  
Thermal Resistance  
Thermal Resistance  
JA  
JC  
90  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
C
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
UNITS  
µA  
µA  
mA  
mA  
V
I
I
I
I
V
V
Rated V  
Rated V  
R =1KΩ  
=1KΩ, T =125°C  
V =12V, QUAD I, II, III, IV  
5.0  
200  
5.0  
5.0  
2.0  
DRM  
DRM  
GT  
H
GT  
TM  
DRM, GK  
DRM, GK  
R
C
D
I =100mA, R =1KΩ  
T
GK  
V =12V, QUAD I, II, III, IV  
D
TM  
I
=1.2A, tp=380µs  
2
1.26  
V
V/µs  
dv/dt  
V = / V  
T =125°C  
DRM, C  
30  
3
D
R1 (03-June 2004)  

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