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CQ92BT PDF预览

CQ92BT

更新时间: 2024-11-21 03:26:39
品牌 Logo 应用领域
CENTRAL 栅极触发装置可控硅三端双向交流开关
页数 文件大小 规格书
2页 73K
描述
Triac 12 Amp, 600 Volt Triac Chip

CQ92BT 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.30.00.80风险等级:5.77
Is Samacsys:N配置:SINGLE
关态电压最小值的临界上升速率:50 V/us最大直流栅极触发电流:5 mA
最大直流栅极触发电压:2 V最大维持电流:10 mA
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e0最大漏电流:2 mA
元件数量:1端子数量:3
最高工作温度:150 °C最低工作温度:-65 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大均方根通态电流:1 A
断态重复峰值电压:200 V子类别:TRIACs
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED触发设备类型:TRIAC
Base Number Matches:1

CQ92BT 数据手册

 浏览型号CQ92BT的Datasheet PDF文件第2页 
TM  
CQ92BT  
CQ92DT  
CQ92MT  
CQ92NT  
Central  
Semiconductor Corp.  
TRIAC  
DESCRIPTION:  
1.0 AMP, 200 THRU 800 VOLTS  
The CENTRAL SEMICONDUCTOR CQ92BT  
Series are epoxy molded silicon Triacs designed  
for full wave AC control applications featuring  
gate triggering in all four (4) quadrants.  
MARKING CODE: FULL PART NUMBER  
TO-92 CASE  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
C
SYMBOL  
CQ92BT CQ92DT CQ92MT CQ92NT  
200 400 600 800  
UNITS  
V
A
A
A2s  
W
W
A
V
°C  
°C  
°C/W  
°C/W  
Peak Repetitive Off-State Voltage  
V
DRM  
T(RMS)  
TSM  
RMS On-State Current (T =50°C)  
I
I
I2t  
1.0  
20  
C
Peak One Cycle Surge (t=10ms)  
I2t Value for Fusing (t=10ms)  
Peak Gate Power (tp=10µs)  
Average Gate Power Dissipation  
Peak Gate Current (tp=10µs)  
Peak Gate Voltage (tp=10µs)  
Storage Temperature  
2.0  
3.0  
0.2  
1.2  
8.0  
P
P
I
GM  
G (AV)  
GM  
V
T
T
Θ
Θ
GM  
stg  
J
-40 to +150  
-40 to +125  
180  
Junction Temperature  
Thermal Resistance  
Thermal Resistance  
JA  
JC  
90  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
C
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
UNITS  
µA  
µA  
mA  
mA  
V
I
I
I
I
V
V
Rated V  
Rated V  
R =1KΩ  
=1KΩ, T =125°C  
V =12V, QUAD I, II, III, IV  
5.0  
200  
3.0  
3.0  
2.0  
DRM  
DRM  
GT  
H
GT  
TM  
DRM, GK  
DRM, GK  
R
C
D
I =100mA, R =1KΩ  
T
GK  
V =12V, QUAD I, II, III, IV  
D
TM  
I
=1.2A, tp=380µs  
2
1.26  
V
V/µs  
dv/dt  
V = / V  
T =125°C  
DRM, C  
30  
3
D
R0 (03-June 2004)  

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暂无描述
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CQ92BTRE CENTRAL

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TRIAC, 200V V(DRM), 1A I(T)RMS, TO-92,