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CQ39DS PDF预览

CQ39DS

更新时间: 2024-11-24 03:26:35
品牌 Logo 应用领域
CENTRAL 栅极触发装置三端双向交流开关
页数 文件大小 规格书
2页 79K
描述
TRIAC 4.0 AMP, 200 THRU 800 VOLTS

CQ39DS 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:TO-39
包装说明:CYLINDRICAL, O-MBCY-W3针数:3
Reach Compliance Code:not_compliantHTS代码:8541.30.00.80
风险等级:5.08Is Samacsys:N
配置:SINGLE关态电压最小值的临界上升速率:10 V/us
最大直流栅极触发电流:5 mA最大直流栅极触发电压:1.8 V
最大维持电流:10 mAJEDEC-95代码:TO-39
JESD-30 代码:O-MBCY-W3JESD-609代码:e0
最大漏电流:1.5 mA元件数量:1
端子数量:3最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:METAL
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大均方根通态电流:4 A断态重复峰值电压:400 V
子类别:TRIACs表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:WIRE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
触发设备类型:4 QUADRANT LOGIC LEVEL TRIACBase Number Matches:1

CQ39DS 数据手册

 浏览型号CQ39DS的Datasheet PDF文件第2页 
TM  
CQ39BS  
CQ39DS  
CQ39MS  
CQ39NS  
Central  
Semiconductor Corp.  
TRIAC  
4.0 AMP, 200 THRU 800 VOLTS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CQ39BS  
series type is a hermetically sealed silicon Triac  
designed for full wave AC control applications  
featuring gate triggering in all four (4) quadrants.  
MARKING CODE: FULL PART NUMBER  
TO-39 CASE  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
C
SYMBOL  
CQ39BS CQ39DS CQ39MS CQ39NS  
200 400 600 800  
UNITS  
V
A
A
A2s  
W
W
A
°C  
Peak Repetitive Off-State Voltage  
V
DRM  
T(RMS)  
TSM  
RMS On-State Current (T =80°C)  
I
I
I2t  
4.0  
35  
2.0  
3.0  
0.2  
1.2  
C
Peak One Cycle Surge (t=10ms)  
I2t Value for Fusing (t=10ms)  
Peak Gate Power (tp=10µs)  
Average Gate Power Dissipation  
Peak Gate Current (tp=10µs)  
Storage Temperature  
P
P
GM  
G(AV)  
GM  
stg  
J
I
T
T
-40 to +150  
-40 to +125  
160  
Junction Temperature  
Thermal Resistance  
Thermal Resistance  
°C  
°C/W  
°C/W  
Θ
Θ
JA  
JC  
9.0  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
C
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
I
I
I
I
I
Rated V  
Rated V  
R
=1KΩ  
10  
200  
5.0  
µA  
µA  
mA  
mA  
mA  
V
DRM  
DRM  
GT  
DRM, GK  
, R =1KΩ, T =125°C  
DRM GK  
C
V =12V, QUAD I, II, III  
2.5  
5.5  
1.6  
D
V =12V, QUAD IV  
9.0  
GT  
D
R
=1KΩ  
GK  
5.0  
H
V
V =12V, QUAD I, II, III, IV  
2.0  
GT  
D
V
I
=6.0A, tp=380µs  
2
1.75  
V
TM  
TM  
dv/dt  
V = / V  
T =125°C  
DRM, C  
11  
V/µs  
3
D
R1 (18-August 2004)  

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